相关论文: Simulation of the response of SiPMs Part II: with …

A Monte Carlo program which simulates the response of SiPMs is presented. Input to the program are the mean number and the time distribution of Geiger discharges from light, as well as the dark-count rate. For every primary Geiger discharge…

Silicon photomultipliers present saturation effects as they have a limited number of pixels and work in Geiger mode. Their response to light pulses in the nonlinear region is very complex for two reasons: pixel recharging after an avalanche…

A systematic study of the nonlinear response of Silicon Photomultipliers (SiPMs) has been conducted through Monte Carlo simulations. SiPMs have been proven to show a universal nonlinear response when it is expressed in terms of relative…

Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived.…

This study investigates the characteristics of Silicon Photomultipliers (SiPMs) with different pixel densities, focusing on their response across a wide dynamic range. Using an experimental setup that combines laser source and…

A statistical model of the nonlinear response of silicon photomultipliers is presented. It includes losses of both the photodetection efficiency and the gain during pixel recovery periods as well as the effect of correlated and uncorrelated…

Methods are developed, which use the pulse-height spectra of SiPMs measured in the dark and illuminated by pulsed light, to determine the pulse shape, the dark-count rate, the gain, the average number of photons initiating a Geiger…

This publication focuses on the study of silicon photomultipliers (SiPMs) in view of a reconstruction of the incident photon flux in the regime of highly non-linear response. SiPMs are semiconductor based light detectors compiled of…

We present a generic framework for the simulation of Silicon Photomultipliers (SiPMs) which enables detailed modelling of the SiPM response using basic SiPM parameters and geometry as an input. Depending on the specified SiPM properties…

The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1 $\mu$m based on the method proposed in Ref.1, are presented. The aim of the study is to achieve a deeper…

We present a detailed investigation of the afterpulse effect in silicon photomultipliers (SiPMs), using a dedicated structure with single-cell readout. This enables direct measurement of intrinsic device properties and observation of…

The characterisation of radiation-damaged SiPMs is a major challenge, when the average time between dark counts approaches, or even exceeds, the signal decay time. In this note a collection of formulae is presented, which have been…

We develop from first principles a model to describe the average response of SiPM devices which takes into account the recovery of pixels during the incoming light pulse. Such effects can significantly affect SiPM response when exposed to a…

SiPMs operate in Geiger mode, wherein photodiode cells are reverse-biased to the breakdown by even a single photon. Each cell is connected in series with a quenching resistor, which prevents cell damage and resets the cell after making a…

In this paper the efficiency of direct charged particle detection with different Silicon PhotoMultiplier (SiPM) sensors has been measured to be close to 100%. Time resolution of about 20 ps has also been confirmed for sensors with an active…

Several types of Silicon Photomultipliers were exposed to short pulsed laser light (~ 30 ps FWHM) with its intensity varying from single photon to well above the number of microcells of the device. We observed a significant deviation of the…

A recent report on the over saturation in SiPMs is puzzling. The measurements, using a variety of SiPMs, show an excess in signal far beyond the physical limit of the number of SiPM microcells without indication of an ultimate saturation.…

The direct response of Silicon PhotoMultipliers being traversed by a MIP charged particle have been studied in a systematic way for the first time. Using beam test data, time resolution and the crosstalk probability have been measured. A…

The current understanding of radiation tollerance of Silicon Photomultipliers (SiPMs) is reviewd. Radiation damage in silicon sensors is briefly introduced, surface and bulk effects are separately addressed. Results on the operation of…

We have developed a function which describes SiPM response in both small signal and highly saturated regimes. The function includes the reactivation of SiPM pixels during a single input light pulse, and results in an approximately linear…