相关论文: Strain Effects on Auger-Meitner Recombination in S…

Strain-mediated interaction between phonons and telecom photons is demonstrated using excited states of erbium ions embedded in a mechanical resonator. Owing to the extremely long-lived nature of rare-earth ions, the dissipation rate of the…

The exciton states of strained CdTe/CdS core-shell tetrapod-shaped nanocrystals were theoretically investigated by the numerical diagonalization of a configuration interaction Hamiltonian based on the single-band effective mass…

First principles density-functional theory calculations were performed to study the effects of strain, edge passivation, and surface functional species on the structural and electronic properties of armchair graphene nanoribbons (AGNRs)…

The performance of modern light-emitting technologies, from lasers to LEDs, is limited by nonradiative losses, with Auger recombination being the dominant channel at device-relevant carrier densities. Reliable modeling of this process is…

The deposition process of the IrMn$_3$/Co$_{70}$Fe$_{30}$ bilayer of antiferromagnet/ferromagnet (AF/FM) type was modified by introducing a nitrogen additive in argon plasma during the magnetron sputtering of the Co$_{70}$Fe$_{30}$ layer.…

Electron-phonon coupling can strongly affect the eigenmodes of nano- and micromechanical resonators. We study the effect of the coupling for $p$-doped semiconductor resonators. We show that the backaction from the strain-induced…

We present an ab initio computational approach for the calculation of resonant Raman intensities, including both excitonic and non-adiabatic effects. Our diagrammatic approach, which we apply to two prototype, semiconducting layered…

Monolayer WSe$_2$ (ML WSe$_2$) exhibits a high second-harmonic generation (SHG) efficiency under single 1-photon (1-p) or 2-photon (2-p) resonant excitation conditions due to enhanced second-order susceptibility compared with off-resonance…

Through the combination of transmission electron microscopy analysis of the deformed microstructure and molecular dynamics computer simulations of the deformation processes, the mechanisms of plastic strain recovery in bulk AgCu eutectic…

We present a computational study on the impact of tensile/compressive uniaxial ($\varepsilon_{xx}$) and biaxial ($\varepsilon_{xx}=\varepsilon_{yy}$) strain on monolayer MoS$_{2}$ NMOS and PMOS FETs. The material properties like band…

Two-dimensional polyaniline monolayer (C3N) has been recently synthesized as an indirect semiconductor with high electron mobility. In this research, with combination of density functional theory and Green function formalism, we investigate…

We demonstrate mechanical modulations of the exciton lifetime by using vibrational strain of a gallium arsenide (GaAs) resonator. The strain-induced modulations have anisotropic dependences on the crystal orientation, which reveals the…

Two-dimensional transition metal dichalcogenides show great potential as promising thermoelectric materials due to their lower dimensionality, the unique density of states and quantum confinement of carriers. The effect of mechanical strain…

Thin film effects on the Magnetocrystalline Anisotropy Energy (MAE) of MnN were studied using density functional theory (DFT). Initially, strain effects on bulk MnN were considered as a proxy for lattice-matching induced strain and a linear…

The combined effect due to mechanical strain, coupling to the plasmons in a doped conducting substrate, the plasmon-phonon scattering in conjunction with the role played by encapsulation of a secondary two-dimensional (2D) layer is…

Monolayer molybdenum disulfide ($\mathrm{MoS_2}$) under strain has many interesting properties and possible applications in technology. A recent experimental study examined the effect of strain on the bandgap of monolayer $\mathrm{MoS_2}$…

The challenge of achieving high thermoelectric (TE) performance is mainly from the entanglement among Seebeck coefficient ($S$), electrical conductivity ($\sigma$), and lattice thermal conductivity ($\kappa_{\mathrm{L}}$). In this work, we…

Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct. It is found that direct bandgaps…

First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-metallic full-Heusler alloy Co2CrAl and ferroelectric…

Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant…