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相关论文: Generic Mott-Hubbard phase diagram for extended Hu…

200 篇论文

We provide solid evidence for the long-standing presumption that model Hamiltonians with short-range interactions faithfully reproduce the physics of the long-range Coulomb interaction in real materials. For this aim, we address a generic…

强关联电子 · 物理学 2025-06-09 Florian Gebhard , Kevin Bauerbach , Örs Legeza

We apply the density-matrix renormalization group (DMRG) method to a one-dimensional Hubbard model that lacks Umklapp scattering and thus provides an ideal case to study the Mott-Hubbard transition analytically and numerically. The model…

强关联电子 · 物理学 2021-12-22 Florian Gebhard , Örs Legeza

We investigate the ground-state phase diagram of the one-dimensional "ionic" Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix…

强关联电子 · 物理学 2009-11-10 A. P. Kampf , M. Sekania , G. I. Japaridze , Ph. Brune

We study the one-dimensional Bose-Hubbard model using the Density-Matrix Renormalization Group (DMRG).For the cases of on-site interactions and additional nearest-neighbor interactions the phase boundaries of the Mott-insulators and charge…

超导电性 · 物理学 2009-10-31 Till D. Kuehner , Steven R. White , H. Monien

We employ the dynamical mean field approximation to study the effects of ionic potential ($\Delta$) on the square lattice Hubbard model. At half-filling when the staggered potential ($\Delta$) dominates the on-site Hubbard interaction…

强关联电子 · 物理学 2019-03-27 A. Shahbazy , M. Ebrahimkhas

We investigate the ground-state phase diagram of the half-filled one-dimensional Hubbard model with next-nearest-neighbor hopping using the Density-Matrix Renormalization Group technique as well as an unrestricted Hartree-Fock…

强关联电子 · 物理学 2009-10-31 S. Daul , R. M. Noack

The ground-state properties of the two-dimensional Hubbard model with nearest-neighbor and next-nearest-neighbor hoppings at half filling are studied by the path-integral-renormalization-group method. The nonmagnetic-insulator phase…

强关联电子 · 物理学 2007-05-23 Shinji Watanabe , Masatoshi Imada

We consider extended Hubbard models with repulsive interactions on a Honeycomb lattice and the transitions from the semi-metal phase at half-filling to Mott insulating phases. In particular, due to the frustrating nature of the…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Raghu , Xiao-Liang Qi , C. Honerkamp , Shou-Cheng Zhang

Employing a combination of functional renormalization group calculations and projective determinantal quantum Monte Carlo simulations, we examine the Hubbard model on the square lattice bilayer at half filling. From this combined analysis,…

强关联电子 · 物理学 2014-11-25 Michael Golor , Timo Reckling , Laura Classen , Michael M. Scherer , Stefan Wessel

Ground state (GS) phase diagram of the one dimensional repulsive Hubbard model with both nearest neighbor ($t$) and next-nearest-neighbor ($t^{\prime}$) hopping and a staggered potential ($\Delta$) is determined in the case of half-filled…

强关联电子 · 物理学 2022-11-22 Mikheil Sekania , Shota Garuchava , Jamal Berakdar , George I. Japaridze

The density-matrix renormalization group is used to study the phase diagram of the one-dimensional half-filled Hubbard model with on-site (U) and nearest-neighbor (V) repulsion, and hopping t. A critical line V_c(U) approximately equal to…

强关联电子 · 物理学 2009-11-07 Eric Jeckelmann

Employing extensive cellular dynamical mean-field theory (CDMFT) calculations with exact diagonalization impurity solver, we investigate the ground state phase diagrams and non-magnetic metal-insulator transitions of the half-filled Hubbard…

强关联电子 · 物理学 2015-03-20 Han-Qing Wu , Rong-Qiang He , Zi Yang Meng , Zhong-Yi Lu

We study the one-dimensional Hubbard model with nearest-neighbor and next-nearest-neighbor hopping integrals by using the density-matrix renormalization group (DMRG) method and Hartree-Fock approximation. Based on the calculated results for…

强关联电子 · 物理学 2009-11-13 S. Nishimoto , K. Sano , Y. Ohta

We use the finite-size density-matrix-renormalization-group (FSDMRG) method to obtain the phase diagram of the one-dimensional ($d = 1$) extended Bose-Hubbard model for density $\rho = 1$ in the $U-V$ plane, where $U$ and $V$ are,…

超导电性 · 物理学 2009-11-10 Ramesh V. Pai , Rahul Pandit

We study the half-filled Hubbard model on a one-parameter family of vortex-full square lattices ranging from the isotropic case to weakly coupled Hubbard dimers. The ground-state phase diagram consists of four phases: A semi-metal and a…

强关联电子 · 物理学 2014-12-01 D. Ixert , F. F. Assaad , K. P. Schmidt

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

We investigate the phases of the ionic Hubbard model in a two-dimensional square lattice using determinant quantum Monte Carlo (DQMC). At half-filling, when the interaction strength or the staggered potential dominate we find Mott and band…

强关联电子 · 物理学 2009-11-13 K. Bouadim , N. Paris , F. Hebert , G. G. Batrouni , R. T. Scalettar

We study the low-energy asymptotics of the half-filled Hubbard model with a circular Fermi surface in $d=1+\epsilon$ continuous dimensions, based on the one-loop renormalization-group (RG) method. Peculiarity of the $d=1+\epsilon$…

强关联电子 · 物理学 2009-10-31 Jun-ichiro Kishine

We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…

强关联电子 · 物理学 2015-06-25 S. S. Kancharla , E. Dagotto

The renormalization group technique is applied to one-dimensional electron-phonon Hubbard models at half-filling and zero temperature. For the Holstein-Hubbard model, the results of one-loop calculations are congruent with the phase diagram…

强关联电子 · 物理学 2015-02-23 Hassan Bakrim , Claude Bourbonnais
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