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We demonstrate theoretically an atomic liquid phase that supports topologically nontrivial electronic structure. A minimum two-orbital model of liquid topological insulator in two dimensions is constructed within the framework of…

介观与纳米尺度物理 · 物理学 2019-06-07 Gia-Wei Chern

The bilayer structure of recently discovered high-temperature superconducting nickelates La$_3$Ni$_2$O$_7$ provides a new platform for investigating correlation and superconductivity. Starting from a bilayer Hubbard model, we show that…

强关联电子 · 物理学 2025-12-23 Zhan Wang , Heng-Jia Zhang , Kun Jiang , Fu-Chun Zhang

We investigate an experimental toy-model system of a pseudospin-half square-lattice Hubbard Hamiltonian in [(SrIrO3)1/(CaTiO3)1] to include both nontrivial complex hopping and moderate electronic correlation. While the former induces…

The one dimensional Bose-Hubbard model at a unit filling factor is studied by means of a very high order symbolic perturbative expansion. Analytical expressions are derived for the ground state quantities such as energy per site, variance…

其他凝聚态物理 · 物理学 2009-11-11 Bogdan Damski , Jakub Zakrzewski

Mott state in 1T-TaS2 is predicted to host quantum spin liquids (QSL). However, its insulating mechanism is controversial due to complications from interlayer coupling. Here, we study the Mott state in monolayer 1T-NbSe2, an electronic…

介观与纳米尺度物理 · 物理学 2021-09-08 Zhen-Yu Liu , Shuang Qiao , Qiao-Yin Tang , Zi-Heng Ling , Wen-Hao Zhang , Hui-Nan Xia , Xin Liao , Wen-Hao Mao , Jing-Tao Lü , Bing Huang , Ying-Shuang Fu

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

We calculate the one-particle density of states for the Mott-Hubbard insulating phase of the Hubbard model on a Bethe lattice in the limit of infinite coordination number. We employ the Kato-Takahashi perturbation theory around the…

强关联电子 · 物理学 2007-05-23 Eva Kalinowski , Florian Gebhard

Inspired by recent experiments on 3He films between one and two atoms thick, we consider a bilayer Hubbard model on a triangular lattice. Our results are obtained in the framework of a cluster dynamical mean-field calculation with a quantum…

强关联电子 · 物理学 2011-04-14 K. S. D. Beach , F. F. Assaad

Motivated by experiments on Josephson junction arrays, and cold atoms in an optical lattice in a synthetic magnetic field, we study the "fully frustrated" Bose-Hubbard (FFBH) model with half a magnetic flux quantum per plaquette. We obtain…

量子气体 · 物理学 2015-05-30 Arya Dhar , Maheswar Maji , Tapan Mishra , R. V. Pai , Subroto Mukerjee , Arun Paramekanti

A theory is developed for the T=0 Mott-Hubbard insulating phases of the infinite-dimensional Hubbard model at half-filling, including both the antiferromagnetic (AF) and paramagnetic (P) insulators. Local moments are introduced explicitly…

强关联电子 · 物理学 2009-10-30 David E. Logan , Michael P. Eastwood , Michael A. Tusch

The combination of strong spin-orbit coupling and Coulomb interactions makes the $5d$ iridates a unique platform for realizing novel correlated electronic states. Here, utilizing infrared spectroscopy, we demonstrate that a robust Mott…

强关联电子 · 物理学 2026-03-06 Kai Wang , Jun Yang , Chaoyang Kang , Weikang Wu , Wenka Zhu , Jianzhou Zhao , Yaomin Dai , Bing Xu

The variational cluster approximation is used to study the frustrated Hubbard model at half filling defined on the two-dimensional square lattice with anisotropic next-nearest-neighbor hopping parameters. We calculate the ground-state phase…

强关联电子 · 物理学 2017-02-02 Kazuma Misumi , Tatsuya Kaneko , Yukinori Ohta

In a well-ordered crystalline solid, insulating behaviour can arise from two mechanisms: electrons can either scatter off a periodic potential, thus forming band gaps that can lead to a band insulator, or they localize due to strong…

Doping a Mott insulator gives rise to unconventional superconducting correlations. Here we address the interplay between d-wave superconductivity and Mott physics using the two-dimensional Hubbard model with cellular dynamical mean-field…

强关联电子 · 物理学 2023-08-30 C. Walsh , M. Charlebois , P. Sémon , A. -M. S. Tremblay , G. Sordi

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

The exact diagonalization and the variational cluster approximation (VCA) are used to study the nature of a novel Mott insulator induced by a strong spin-orbit coupling for a two-dimensional three-band Hubbard model consisting of the…

强关联电子 · 物理学 2014-11-24 Tomonori Shirakawa , Hiroshi Watanabe , Seiji Yunoki

Motivated by recent studies of the cluster Mott insulator candidate compound Nb3Cl8, this study performs 93Nb and 35Cl nuclear magnetic resonance (NMR) measurements to investigate the electron correlations. Below the structural transition…

强关联电子 · 物理学 2025-03-18 Y. Z. Zhou , X. Han , J. Luo , D. T. Wu , A. F. Fang , B. Shen , B. J. Feng , Y. G. Shi , J. Yang , R. Zhou

We present a framework for analyzing Mott insulators using a material-based tight-binding model. We start with a realistic multiorbital Hubbard model and derive an effective model for the localized electrons through the second-order…

强关联电子 · 物理学 2024-03-20 Ryuta Iwazaki , Hiroshi Shinaoka , Shintaro Hoshino

Conductivity is one of the most direct probes of electronic systems, yet its theoretical description remains challenging in the presence of strong non-local correlations. In this Letter, we analyze the conductivity of the half-filled…

Motivated by superconductivity (SC) in layered nitrides, we study an ionic-Hubbard model on a honeycomb lattice, which consists of two sublattices with an energy-level offset, by using an optimization variational Monte Carlo method.…

超导电性 · 物理学 2015-06-11 Tsutomu Watanabe , Sumio Ishihara