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We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…

介观与纳米尺度物理 · 物理学 2013-01-04 S. Larentis , B. Fallahazad , E. Tutuc

The modern implementation of machine learning architectures faces significant challenges due to frequent data transfer between memory and processing units. In-memory computing, primarily through memristor-based analog computing, offers a…

硬件体系结构 · 计算机科学 2024-08-20 Omar Ghazal , Tian Lan , Shalman Ojukwu , Komal Krishnamurthy , Alex Yakovlev , Rishad Shafik

Group-VI transition metal dichalcogenides (TMDs), MoS$_2$ and MoSe$_2$, have emerged as prototypical low-dimensional systems with distinctive phononic and electronic properties, making them attractive for applications in nanoelectronics,…

材料科学 · 物理学 2025-09-18 Tugbey Kocabas , Murat Keceli , Tanju Gurel , Milorad Milosevic , Cem Sevik

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…

The number of electrified powertrains is ever increasing today towards a more sustainable future; thus, it is essential that unwanted failures are prevented, and a reliable operation is secured. Monitoring the internal temperatures of…

机器学习 · 计算机科学 2025-04-28 Dinan Li , Panagiotis Kakosimos

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

Recent advances in metamaterials and fabrication techniques have revived interest in mechanical computing. Contrary to techniques relying on static deformations of buckling beams or origami-based lattices, the integration of wave scattering…

应用物理 · 物理学 2025-11-04 Ethan Fort , Mohamed Mousa , Mostafa Nouh

We review vibrational and electronic properties of single and a few layer MoS$_2$ relevant to understand their resonant and non-resonant Raman scattering results. In particular, the optical modes and low frequency shear and layer breathing…

介观与纳米尺度物理 · 物理学 2015-02-13 Achintya Bera , A. K. Sood

Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted significant attention because of its outstanding properties, suitable for application in several critical technologies like, solar cells, photocatalysis, lithium-ion batteries,…

Newly measured optical absorption and photoluminescence spectra reveal substantial frequency shifts of both exciton and trion peaks as monolayer MoS2 is cooled from 363 K to 4 K. First-principles simulations using the GW-Bethe-Salpeter…

介观与纳米尺度物理 · 物理学 2014-05-22 Ryan Soklaski , Yufeng Liang , Changjian Zhang , Haining Wang , Farhan Rana , Li Yang

There is increasing demand to bring machine learning capabilities to low power devices. By integrating the computational power of machine learning with the deployment capabilities of low power devices, a number of new applications become…

As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…

介观与纳米尺度物理 · 物理学 2023-07-10 Zijing Zhao , Junzhe Kang , Ashwin Tunga , Hojoon Ryu , Ankit Shukla , Shaloo Rakheja , Wenjuan Zhu

Sub-1-nm gate length $MoS_2$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the sub-1-nm gate length monolayer (ML) $MoS_2$ transistors…

计算物理 · 物理学 2024-04-23 Ying Li , Yang Shen , Linqiang Xu , Shiqi Liu , Yang Chen , Qiuhui Li , Zongmeng Yang , Xiaotian Sun , He Tian , Jing Lu

We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is…

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…

In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron injection is characterized by an applied VDS smaller than…

介观与纳米尺度物理 · 物理学 2011-01-04 G. Giusi , G. Iannaccone , U. Ravaioli

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene,…

介观与纳米尺度物理 · 物理学 2012-09-17 Han Wang , Lili Yu , Yi-Hsien Lee , Yumeng Shi , Allen Hsu , Matthew Chin , Lain-Jong Li , Madan Dubey , Jing Kong , Tomas Palacios

Temperature is a fundamental regulator of chemical and biochemical kinetics, yet capturing nonlinear thermal effects directly from experimental data remains a major challenge due to limited throughput and model flexibility. Recent advances…

定量方法 · 定量生物学 2025-12-23 Mamoru Saita , Yutaka Hori

Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons…

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…

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