相关论文: Conductance oscillations of antiferromagnetic laye…
The tunnel splitting in biaxial antiferromagnetic particles is studied with a magnetic field applied along the hard anisotropy axis. We observe the oscillation of tunnel splitting as a function of the magnetic field due to the quantum phase…
We make a theoretical study of the quantum oscillations of the tunneling magnetoresistance (TMR) as a function of the spacer layer thickness. Such oscillations were recently observed in tunneling junctions with a nonmagnetic metallic spacer…
The dependence of tunneling conductance and tunneling magnetoresistance (TMR) on barrier thickness in magnetic tunnel junctions is theoretically investigated. The complex band structure of the insulator is taken into account, and an…
Oscillatory tunneling magnetoresistance (TMR) as a function of spacer thickness is investigated theoretically for a magnetic tunnel junction with a nonmagnetic layer inserted between the tunnel barrier and the ferromagnetic layer. TMR is…
The tunneling splitting in biaxial ferrimagnetic particles at excited states with an explicit calculation of the prefactor of exponent is obtained in terms of periodic instantons which are responsible for tunneling at excited states and is…
We study the transport properties of a Josephson junction consisting of two identical $s$-wave superconductors separated by an even-layer ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ (MBT). Using recursive Green's function method, we calculate…
The possibility of quantum oscillations of the tunnel conductance and magnetoresistance induced by spin-wave excitations in a ferromagnet-ferromagnet-ferromagnet double barrier tunnel junction, when the magnetizations of the two side…
The quantum interference effects induced by the topological phase are studied analytically in biaxial antiferromagnets with an external magnetic field at an arbitrarily angle. This study provides a nontrivial generalization of the Kramers…
The abstract notion of topology has led to profound insights into real materials. Notably, the surface and edges of topological materials can host physics, such as unidirectional charge or spin transport, that is unavailable in isolated…
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate…
Two antiferromagnetically coupled tunneling systems is a minimal model exhibiting the effect of quantum-mechanical phase in the Landau-Zener effect. It is shown that the averaged staying probability oscillates vs resonance shift between the…
We investigate charge transport in two-dimensional ferromagnet/feromagnet junction on a topological insulator. The conductance across the interface depends sensitively on the directions of the magnetizations of the two ferromagnets, showing…
Based on a microscopic model, we study the interplay between superconductivity and antiferromagnetism in a multi-layered system, where two superconductors are separated by an antiferromagnetic region. Within a self-consistent mean-field…
Magnetic tunnel junction (MTJ) is the key component to enable information access and increasing number of MTJs is integrated to develop high-density spintronic devices. However, continuous miniaturization of the conventional MTJs is…
We study the transport properties of a graphene ferromagnet-insulator superconductor (FIS) junction within the Blonder-Tinkham-Klapwijk formalism by solving spin-polarized Dirac-Bogoliubov-de-Gennes equation. We find that the retro and…
Josephson weak links made of two-dimensional topological insulators (TIs) exhibit magnetic oscillations of the supercurrent that are reminiscent of those in superconducting quantum interference devices (SQUIDs). We propose a microscopic…
We calculate the tunneling magnetoresistance (TMR) of Fe|ZnSe|Fe|ZnSe|Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of Fe|ZnSe|Fe simple junctions. The…
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…
The effect of incoherent interlayer transport on the interlayer resistance of a layered metal is considered. We find that for both quasi-one-dimensional and quasi-two-dimensional Fermi liquids the angular dependence of the magnetoresistance…
We present a numerical study of conductance oscillations of transition metal multilayers as a function of layer thickness. Using a material-specific tight-binding model, we show that for disorder-free layers with random thicknesses but…