相关论文: Quantum transport properties of tantalum-oxide res…
Superconducting qubits are a key contender for quantum computing elements, but they often face challenges like noise and decoherence from two-level systems (TLS). Tantalum (Ta) qubits are notable for their long T$_1$ coherence times nearing…
The topological confinement is a new mechanism that allows the transmission of cutoff orbital angular momentum (OAM) modes with negligible loss in ring-core fibers (RCFs) and provides a natural immunity against mode coupling. We investigate…
Quantum teleportation is essential for many quantum information technologies including long-distance quantum networks. Using fiber-coupled devices, including state-of-the-art low-noise superconducting nanowire single photon detectors and…
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of…
Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a…
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$). However, at…
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable,…
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
SrTiO$_3$, although a wide gap insulator, has long been known to become metallic and superconducting at extremely low doping levels. This has given rise to questions concerning the coexistence or interdependence of metallicity,…
We study coherent transport in a system of a periodic linear chain of quantum dots placed between two parallel quantum wires. We show that resonant-tunneling conductance between the wires exhibits a Rabi splitting of the resonance peak as a…
We investigate quantum transport in aligned carbon nanotube (CNT) fibers fabricated via solution spinning, focusing on the roles of structural dimensionality and quantum interference effects. The fibers exhibit metallic behavior at high…
Non-volatile memory devices have received a lot of interest in both industry and academia in the last decade. Transition metal oxide-based memories offer potential applications as universal memory and artificial synapses. Here we focus on…
We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling…
Classical molecular dynamics and electro-diffusion theories have achieved profound success in elucidating ion selectivity and gating mechanisms. However, reconciling strict selectivity with high flux permeation in Angstrom-scaled biological…
We present a transparent conducting electrode composed of a periodic two-dimensional network of silver nanowires. Networks of Ag nanowires are made with wire diameters of 45-110 nm and pitch of 500, 700 and 1000 nm. Anomalous optical…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film…
We report a microwave study of the longitudinal and transverse transport properties of the quasi-one-dimensional organic conductor (TMTSF)$_2$PF$_6$ in its normal phase. The contactless technique have provided a direct measurement of the…
Helium focused ion beam irradiation enables the fabrication of tunnel field-effect transistors based on two-dimensional electron systems (2DESs) at an oxide interface.High resolution scanning transmission electron microscopy and strain…