相关论文: Quantum transport properties of tantalum-oxide res…
Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…
In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a…
We have used the scanning charged tip of an Atomic Force Microscope (AFM) to produce images of the conductance variation of a quantised 1D ballistic channel. The channel was formed using electron beam defined 700 nm wide split gate surface…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
We present the results from an experimental study of the magneto-transport of superconducting wires of amorphous Indium-Oxide, having widths in the range 40 - 120 nm. We find that, below the superconducting transition temperature, the wires…
Conductive bridge random access memory devices such as Cu/SiO2/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multiple-conductance states, scalability, low off-current, and…
Atomic migration from metallic contacts, and subsequent filament formation, is recognised as a prevailing mechanism leading to resistive switching in memristors based on two-dimensional materials (2DMs). This study presents a detailed…
In this work, we investigate the conduction properties of strongly interacting fermions flowing through a quasi two-dimensional, multimode channel, which connects two atomic reservoirs. The atomic current in the channel is controlled using…
Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental…
We have developed an efficient scalable kernel method for thermal transport in open systems, with which we have computed the thermal conductance of a junction between bulk silicon and silicon nanowires with diameter up to 10 nm. We have…
We report thermally activated transport resonances for biases below the superconducting energy gap in a carbon nanotube (CNT) quantum dot (QD) device with a superconducting Pb and a normal metal contact. These resonances are due to the…
Recent cold atom experiments have observed bad and strange metal behaviors in strongly-interacting Fermi-Hubbard systems. Motivated by these results, we calculate the thermoelectric transport properties of a 2D Fermi-Hubbard system in the…
Efficient all-photonic quantum teleportation requires fast and deterministic sources of highly indistinguishable and entangled photons. Solid-state-based quantum emitters--notably semiconductor quantum dots--are a promising candidate for…
Tantalum pentoxide (Ta2O5), as a silicon-photonic-compatible material platform, has garnered significant attention for high-performance integrated photonics due to its exceptional properties: a broad transparency window spanning from 0.28…
Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
We investigate the stability of destructive quantum interference (DQI) in electron transport through graphene nanostructures connected to source and drain electrodes. The fingerprint of DQI is the presence of an antiresonance in the…
Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined…
We report combined scanning probe microscopy and electrical measurements to investigate local electronic transport in reduced graphene oxide (rGO) devices. We demonstrate that quantum transport in these materials can be significantly tuned…
We investigate quantum transport through strongly disordered barriers, made of a material with exceptionally high resistivity that behaves as an Anderson insulator or a ``bad metal'' in the bulk, by analyzing the distribution of Landauer…