相关论文: Gate Tunable Lateral 2D pn Junctions: An Analytica…
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…
It is well known that typical PT-symmetric systems suffer symmetry breaking when the strength of the gain-loss terms exceeds a certain critical value. We present a summary of recently published and newly produced results which demonstrate…
Plasmons in two-dimensional electron gas (2DEG) strips with grounded electrodes (a gate or side contacts) are investigated. We consider two systems: (a) the 2DEG strip with a highly conducting gate and (b) the 2DEG strip with semi-infinite…
Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, we present the atomic-scale evolution of the…
We present an accurate and efficient algorithm to calculate the electrostatic interaction of charged point particles with partially periodic boundary conditions that are confined along the nonperiodic direction by two metallic parallel…
Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are…
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts.…
The transport properties of a disordered two-dimensional (2D) honeycomb lattice are examined numerically using the spectral approach to the quantum percolation problem, characterized by an Anderson-type Hamiltonian. In our simulations,…
We study equilibrium statistical mechanics of classical point counter-ions, formulated on 2D Euclidean space with logarithmic Coulomb interactions (infinite number of particles) or on the cylinder surface (finite particle numbers), in the…
We investigate the thermoelectric performance of 2D nanojunctions with gate tunable architectures and varying channel lengths from 3 to 12 nm using a combination of first principles simulations, including density functional theory, DFT with…
A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths.…
In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
One-dimensional (1D) quantum systems are a cornerstone of many-body physics. However, their realization in solids has traditionally relied on top-down methods, which are limited by structural disorder and coarse confinement. Here, we…
We study the influence of electron puddles created by doping of a 2D topological insulator on its helical edge conductance. A single puddle is modeled by a quantum dot tunnel-coupled to the helical edge. It may lead to significant inelastic…
Phase behaviors of two-dimensional (2D) systems constitute a fundamental topic in condensed matter and statistical physics. Although hard polygons and interactive point-like particles are well studied, the phase behaviors of more realistic…
A proper treatment of electrostatic interactions is crucial for the accurate calculation of forces in computer simulations. Electrostatic interactions are typically modeled using Ewald based methods, which have become one of the…
Solitons in one-dimensional parity-time (PT)-symmetric periodic potentials are studied using exponential asymptotics. The new feature of this exponential asymptotics is that, unlike conservative periodic potentials, the inner and outer…
A simple and effective method for the junction termination design was suggested. Optimization method uses lateral charge function F(x) which depends from two arguments and can be changed in wide range of shapes. To demonstrate method…
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG)…