相关论文: Domain Wall-Magnetic Tunnel Junction Analog Conten…

The energy efficiency of analog computing-in-memory (ACIM) accelerator for recurrent neural networks, particularly long short-term memory (LSTM) network, is limited by the high proportion of nonlinear (NL) operations typically executed…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power…

Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…

The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…

As Moore's law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling…

A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…

Deep neural networks are widely deployed in many fields. Due to the in-situ computation (known as processing in memory) capacity of the Resistive Random Access Memory (ReRAM) crossbar, ReRAM-based accelerator shows potential in accelerating…

Domain-Wall Memory (DWM) structures typically bundle nanowires shifted together for parallel access. Ironically, this organization does not allow the natural shifting of DWM to realize \textit{logical shifting} within data elements. We…

This paper presents a tutorial and review of SRAM-based Compute-in-Memory (CIM) circuits, with a focus on both Digital CIM (DCIM) and Analog CIM (ACIM) implementations. We explore the fundamental concepts, architectures, and operational…

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

Analog Compute-in-Memory (CiM) accelerators are increasingly recognized for their efficiency in accelerating Deep Neural Networks (DNN). However, their dependence on Analog-to-Digital Converters (ADCs) for accumulating partial sums from…

The demand for computation resources and energy efficiency of Convolutional Neural Networks (CNN) applications requires a new paradigm to overcome the "Memory Wall". Analog In-Memory Computing (AIMC) is a promising paradigm since it…

As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…

Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of…

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane…

Recurrent Neural Networks (RNNs) are an important class of neural networks designed to retain and incorporate context into current decisions. RNNs are particularly well suited for machine learning problems in which context is important,…

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

This paper presents a low cost PMOS-based 8T (P-8T) SRAM Compute-In-Memory (CIM) architecture that efficiently per-forms the multiply-accumulate (MAC) operations between 4-bit input activations and 8-bit weights. First, bit-line (BL)…