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Systematic spectroscopic ellipsometry investigations have been performed in order to elucidate the asymmetric insulator-to-metal transition in thin VO$_2$ films. The comprehensive analysis of the obtained macroscopic optical response yields…

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

强关联电子 · 物理学 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

We have performed first order reversal curve measurements of the temperature-driven metal-insulator transition in VO$_2$ thin films, which enable quantitative analysis of the hysteresis behavior. An unexpected tail-like feature in the…

材料科学 · 物理学 2009-06-12 J. -G. Ramírez , A. Sharoni , Y. Dubi , M. E. Gómez , Ivan K. Schuller

Vanadium dioxide (VO$_2$) exhibits hysteresis in resistance while undergoing a thermally driven insulator-metal transition (IMT). Understanding the nonequilibrium effects in resistance is of great interest, as VO$_2$ is a strong candidate…

Vanadium dioxide (VO$_2$) has received significant interest in the context of nanophotonic metamaterials and memories owing to its reversible insulator-metal transition associated with significant changes in its optical and electronic…

介观与纳米尺度物理 · 物理学 2025-02-25 Peter Kepič , Michal Horák , Jiří Kabát , Vlastimil Křápek , Andrea Konečná , Tomáš Šikola , Filip Ligmajer

We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal…

The ultrafast photoinduced insulator-metal transition in VO2 is studied at different temperatures and excitation fluences using multi-THz probe pulses. The spectrally resolved mid-infrared response allows us to trace separately the dynamics…

强关联电子 · 物理学 2015-03-19 A. Pashkin , C. Kübler , H. Ehrke , R. Lopez , A. Halabica , R. F. Haglund, , R. Huber , A. Leitenstorfer

Coupled structural and electronic phase transitions underlie the multifunctional properties of strongly-correlated materials. For example, colossal magnetoresistance1,2 in manganites involves phase transition from paramagnetic insulator to…

强关联电子 · 物理学 2010-03-23 Joyeeta Nag , Richard Haglund , Andrew Payzant , Karren More

We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…

Synchrotron X-ray total scattering studies of structural changes in rutile VO2 at the metal-insulator transition temperature of 340 K reveal that monoclinic and tetragonal phases of VO2 coexist in equilibrium, as expected for a first-order…

材料科学 · 物理学 2010-08-10 Serena A. Corr , Daniel P. Shoemaker , Brent C. Melot , Ram Seshadri

Long regarded as a model system for studying insulator-to-metal phase transitions, the correlated electron material vanadium dioxide (VO$_2$) is now finding novel uses in device applications. Two of its most appealing aspects are its…

介观与纳米尺度物理 · 物理学 2016-04-18 M. A. Huber , M. Plankl , M. Eisele , R. E. Marvel , F. Sandner , T. Korn , C. Schüller , R. F. Haglund, , R. Huber , T. L. Cocker

Electronic and structural degrees of freedom are often intimately coupled in strongly correlated systems, which result in intriguing macroscopic and microscopic phenomena. Using the well-studied material VO$_2$ as a prototype, here we…

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

The temperature ($T$) dependent metal-insulator transition (MIT) in VO$_2$ is investigated using bulk sensitive hard x-ray ($\sim$ 8 keV) valence band, core level, and V 2$p-3d$ resonant photoemission spectroscopy (PES). The valence band…

Vanadium dioxide (VO$_2$) is a strongly-correlated material that exhibits insulator-to-metal transition (IMT) near room temperature, which makes it a promising candidate for applications in nanophotonics or optoelectronics. However,…

We apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly-correlated electron system. We discuss the case of the model system VO2, a prototypical non-magnetic compound that…

强关联电子 · 物理学 2007-05-23 A. Cavalleri , Th. Dekorsy , H. H. Chong , J. C. Kieffer , R. W. Schoenlein

Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and…

材料科学 · 物理学 2023-04-19 S. R. Sahu , S. S. Majid , A. Ahad , A. Tripathy , K. Dey , S. Pal , B. K. De , Wen-Pin Hsieh , R. Rawat , V. G. Sathe , D. K. Shukla

We have made a detailed temperature-dependent photoemission study of VO_2/TiO_2(001) thin films, which show a metal-insulator transition at \sim 300 K. Clean surfaces were obtained by annealing the films in an oxygen atmosphere. Spectral…

强关联电子 · 物理学 2009-11-10 K. Okazaki , H. Wadati , A. Fujimori , M. Onoda , Y. Muraoka , Z. Hiroi

We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different…

强关联电子 · 物理学 2014-11-18 J. Laverock , S. Kittiwatanakul , A. A. Zakharov , Y. R. Niu , B. Chen , S. A. Wolf , J. W. Lu , K. E. Smith

We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric properties of the metallic and insulating puddles observed by scanning near-field infrared…

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