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相关论文: Optical signature for distinguishing between Mott-…

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Recent advances in the field of quantum Monte Carlo simulations for impurity problems allow --within dynamical mean field theory-- for a more thorough investigation of the two-band Hubbard model with narrow/wide band and SU(2)-symmetric…

统计力学 · 物理学 2007-05-23 R. Arita , K. Held

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…

The low-energy properties of transition metal oxides (TMOs) are governed by the electrons occupying strongly correlated $d$-orbitals that are hybridized with surrounding ligand oxygen $p$ orbitals to varying degrees. Their physics is thus…

强关联电子 · 物理学 2025-08-05 Samuel Milner , Steven Johnston , Adrian Feiguin

High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…

强关联电子 · 物理学 2016-07-05 L. Fratino , P. Sémon , G. Sordi , A. -M. S. Tremblay

The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott…

强关联电子 · 物理学 2009-11-11 Andreas Fuhrmann , David Heilmann , Hartmut Monien

Optical conductivity measurements on a BaCoS2 single crystal show an unusual linear behavior over a broad spectral range. In the paramagnetic phase above 300 K, the spectrum shows no gap, which contradicts the previously proposed scenario…

强关联电子 · 物理学 2018-10-10 D. Santos-Cottin , Y. Klein , Ph. Werner , T. Miyake , L. de' Medici , A. Gauzzi , R. P. S. M. Lobo , M. Casula

In this study, we investigate the metal-insulator transition of charge transfer type in high-temperature cuprates. We first show that we must introduce a new band parameter in the three-band d-p model to reproduce the Fermi surface of high…

强关联电子 · 物理学 2014-08-05 Takashi Yanagisawa , Mitake Miyazaki

YTiO3, as a prototypical Mott insulator, has been the subject of numerous experimental investigations of its electronic structure. The onset of absorption in optical conductivity measurements has generally been interpreted to be due to…

材料科学 · 物理学 2014-10-10 Burak Himmetoglu , Anderson Janotti , Lars Bjaalie , Chris G. Van de Walle

Recent angle resolved photoemission data, which found evidence for a d-wave-like modulation of the antiferromagnetic gap, suggest an intimate interrelation between the antiferromagnetic insulator and the superconductor with its d-wave gap.…

强关联电子 · 物理学 2009-10-31 Marc G. Zacher , Werner Hanke , Enrico Arrigoni , Shou-Cheng Zhang

The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…

强关联电子 · 物理学 2009-11-10 A. Liebsch

We present a theoretical analysis of intraband optical transitions from the intermediate pseudo-band of confined states to the conduction band in a finite, inhomogeneous stack of self-assembled semiconductor quantum dots. The chain is…

介观与纳米尺度物理 · 物理学 2015-03-20 Igor Bragar , Paweł Machnikowski

Sr$_2$IrO$_4$ has attracted a lot of attention due to its structural and electronic similarities to La$_2$CuO$_4$ which is the parent compound of high-T$_c$ superconducting cuprates. It was proposed to be a strong spin-orbit coupled…

In order to clarify the physics of the crossover from a Peierls band insulator to a correlated Mott-Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein-Hubbard model using…

强关联电子 · 物理学 2009-11-07 H. Fehske , A. P. Kampf , M. Sekania , G. Wellein

The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…

We discuss the spectroscopic fingerprints that a surface Mott-Hubbard insulator should show at the intra-atomic level. The test case considered is that of the Si-terminated SiC(0001) sqrt{3}xsqrt{3} surface, which is known experimentally to…

强关联电子 · 物理学 2009-10-31 G. Santoro , S. Scandolo , E. Tosatti

The parent compounds of the high-temperature cuprate superconductors are Mott insulators. It has been generally agreed that understanding the physics of the doped Mott insulators is essential to understanding the mechanism of high…

Strongly correlated insulators are broadly divided into two classes: Mott-Hubbard insulators, where the insulating gap is driven by the Coulomb repulsion $U$ on the transition-metal cation, and charge-transfer insulators, where the gap is…

Metals approaching the Mott insulator generate a new hierarchy in the electronic structure accompanied by a momentum dependent electron differentiation, beyond the Mott-Hubbard, Brinkman-Rice and Slater pictures of the Mott transition. To…

强关联电子 · 物理学 2009-11-07 Shigeki Onoda , Masatoshi Imada

We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…

强关联电子 · 物理学 2013-04-30 Ru Chen , SungBin Lee , Leon Balents

We report the formation of a non-magnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO3 and the antiferromagnetic charge transfer insulator LaFeO3. By density functional theory…

强关联电子 · 物理学 2014-12-10 J. E. Kleibeuker , Z. Zhong , H. Nishikawa , J. Gabel , A. Müller , F. Pfaff , M. Sing , K. Held , R. Claessen , G. Koster , G. Rijnders
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