相关论文: Density-tuned effective metal-insulator transition…

Two recent electronic transport experiments from Columbia University and Harvard University have reported record high mobility and low channel densities in transition metal dichalcogenide (TMD) WSe$_2$ monolayers [J. Pack, et al.,…

Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier…

We consider temperature-induced melting of a Wigner solid in one dimensional (1D) and two dimensional (2D) lattices of electrons interacting via the long-range Coulomb interaction in the presence of strong disorder arising from charged…

Using Ioffe-Regel-Mott (IRM) criterion for strong localization crossover in disordered doped 2D electron systems, we theoretically study the relationships among the three key experimentally determined localization quantities: critical…

Critically analyzing recent STM and transport experiments [Z. Ge, et al, arXiv:2510.12009] on 2D electron systems in the presence of random quenched impurities, we argue that the resulting low-density putative "solid" phase reported…

We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…

Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder…

We theoretically consider the problem of doping induced insulator to metal transition in bulk semiconductors by obtaining the transition density as a function of compensation, assuming that the transition is an Anderson localization…

A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…

We develop a minimal theory for the recently observed metal-insulator transition (MIT) in two-dimensional (2D) moir\'e multilayer transition metal dichalcogenides (mTMD) using Coulomb disorder in the environment as the underlying mechanism.…

Anderson localization transitions are a universal quantum phenomenon sensitive to the disorder and dimensionality of electronic systems. Over the past decades, this intriguing topic has inspired overwhelmingly more theoretical studies than…

We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…

We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density…

A study of the temperature (T) and density (n_s) dependence of conductivity \sigma(n_s,T) of a highly disordered, two-dimensional (2D) electron system in Si demonstrates scaling behavior consistent with the existence of a metal-insulator…

We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…

Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections…

Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention. In the strongly-interacting limit, electrons are expected…

It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two…

It is commonly believed that a non-interacting disordered electronic system can undergo only the Anderson metal-insulator transition. It has been suggested, however, that a broad class of systems can display disorder-driven transitions…

It is well known that the metal-insulator transition in two dimensions for non-interacting fermions takes place at infinitesimal disorder. In contrast, the superconductor-to-insulator transition takes place at a finite critical disorder (on…