相关论文: Reverse Doping Asymmetry in Semiconductor Thin Fil…

Nonlinear optical frequency conversion, where optical fields interact with a nonlinear medium to generate new frequencies, is a key phenomenon in modern photonic systems. However, a major challenge with these techniques lies in the…

The strong electron-electron interaction in transition metal dichalcogenides (TMDs) gives rise to phenomena such as strong exciton and trion binding and excitonic condensation, as well as large negative exchange and correlation…

We measure the local harmonic generation from superconducting thin films at microwave frequencies to investigate the intrinsic nonlinear Meissner effect near Tc in zero magnetic field. Both second and third harmonic generation are measured…

We present an angle resolved photoemission (ARPES) doping dependence study of the n-type cuprate superconductor Nd_2-xCe_xCuO_4, from the half-filled Mott-insulator to the T_c=24K superconductor. In Nd2CuO4, we reveal the charge-transfer…

Diamond is an excellent band insulator. However, boron (B) doping is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner…

Illumination has been long known to affect semiconductor defect properties during either growth or operating process. Current theories of studying the illumination effects on defects usually have the assumption of unaffected formation…

Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface…

Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here,…

Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities, which is, however, largely hindered by the lack of fundamental rules. In this Letter, for the first time, we develop a unified…

Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature of diamond grains embedded in an amorphous carbon and a hydrogenated amorphous carbon…

Electronic Raman scattering from high- and low-energy excitations was studied as a function of temperature, extent of hole doping, and energy of the incident photons in Bi_2Sr_2CaCu_2O_{8 \pm \delta} superconductors. For underdoped…

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…

Using electrically detected magnetic resonance spectroscopy, we demonstrate that doping the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) with ethylene glycol allows for the control of effective…

The impact of the normal-state pseudogap, present in all optimal and underdoped HTS cuprates, on critical currents and critical temperature is surveyed. With the opening of the pseudogap around a doping state of p=0.19 the condensation…

By measuring the polarization changes in THz, infrared, and visible radiation over an extended energy range (3-2330 meV), we observe symmetry-breaking in cuprate high temperature superconductors over wide energy, doping, and temperature…

The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe…

Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and…

Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however…

We report effect of Gd inclusion in the NbN superconductor thin films. The films are deposited on single crystalline Silicon (100) by DC reactive sputtering technique i.e., deposition of Nb and Gd in presence of reactive N2 gas. The…

We apply a recently-developed low-field technique to inductively measure the critical pair momentum $p_c$ in thin, underdoped films of Y$_{1-x}$Ca$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-\delta}$ and Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+\delta}$ reflecting a…