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相关论文: Symmetry-dependent antiferromagnetic proximity eff…

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As an emerging magnetic phase, altermagnets (AMs) with collinear compensated magnetism in real space and alternating spin splitting in the band structure have attracted widespread attention. Here, based on first-principles calculations, we…

材料科学 · 物理学 2026-04-23 Jianke Tian , Xiaowen Zhou , Gui-Bin Liu

Superior to ferromagnetic (FM) valleytronics, antiferromagnetic (AFM) counterpart exhibits ultradense and ultrafast potential due to their intrinsic advantages of zero stray field, terahertz dynamics, and compensated moment of…

材料科学 · 物理学 2024-11-12 San-Dong Guo , Ping Li , Guangzhao Wang

Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides…

材料科学 · 物理学 2018-01-17 Lei Xu , Ming Yang , Lei Shen , Jun Zhou , Tao Zhu , Yuan Ping Feng

In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenides monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are…

材料科学 · 物理学 2016-09-06 Xiaofang Chen , Liangshuai Zhong , Xiao Li , Jingshan Qi

Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…

材料科学 · 物理学 2024-05-30 San-Dong Guo , Liguo Zhang , Xiao-Shu Guo , Gangqiang Zhu

The generation and control of spin- and valley-polarization in antiferromagnets (AFMs) have garnered increasing attention due to their potential for enabling faster and more stable multifunctional spintronic and valleytronic memory and…

介观与纳米尺度物理 · 物理学 2025-07-08 Jiaqi Feng , Xiaodong Zhou , Jingyan Chen , Meiling Xu , Xiuxian Yang , Yinwei Li

The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples…

Antiferromagnetic superlattices (AFSL) are proposed based on the buckled hexagonal two-dimensional materials, which can be realized by the proximity effect of the periodically deposited antiferromagnets. It is found that the AF proximity…

介观与纳米尺度物理 · 物理学 2025-09-05 Wei-Tao Lu , Tie-Feng Fang , Qing-Feng Sun

To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the…

材料科学 · 物理学 2023-05-24 Xiaohui Wang , Li Liang , Xiao Li

We compute valley splittings in Si/SiGe superlattices using ab initio density functional theory (DFT). This first-principle approach is expected to provide an excellent description of interfaces, strains, and atomistic disorder without…

Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…

材料科学 · 物理学 2024-04-30 San-Dong Guo , Liguo Zhang , Yiwen Zhang , Guangzhao Wang

Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…

材料科学 · 物理学 2023-02-07 San-Dong Guo , Yu-Ling Tao , Guang-Zhao Wang , Shaobo Chen , Yee Sin Ang

Altermagnets, a newly discovered class of materials, exhibit zero net magnetization while hosting spin-split electronic bands. However, monolayer altermagnets maintain degenerate band gaps at the high-symmetry X and Y points in the…

材料科学 · 物理学 2026-05-08 Xin Zhang , Shihao Zhang

Degenerate minima in momentum space - valleys - provide an additional degree of freedom that can be used for information transport and storage. Notably, such minima naturally exist in the band structure of transition metal dichalcogenides…

The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…

材料科学 · 物理学 2025-01-23 Ankita Phutela , Saswata Bhattacharya

In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic…

Altermagnets (AM) are a recently discovered third class of collinear magnets, and have been attracting significant interest in the field of condensed matter physics. Here, based on first-principles calculations and theoretical analysis, we…

材料科学 · 物理学 2024-12-02 Jin-Yang Li , An-Dong Fan , Yong-Kun Wang , Ying Zhang , Si Li

Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition metal dichalcogenide (TMDC) with broken inversion symmetry possesses two degenerate yet…

Altermagnets represent a newly identified third class of collinear magnets and have recently emerged as a focal point in condensed matter physics. In this work, through first-principles calculations and theoretical analysis, we identify…

材料科学 · 物理学 2025-12-15 An-Dong Fan , Yong-Kun Wang , Jin-Yang Li , Si Li

We study spatial symmetry in general ABA-stacked multilayer graphene to illustrate how electronic spectra at the two valleys are related in a magnetic field. We show that the lattice of multilayers with an even number of layers, as well as…

介观与纳米尺度物理 · 物理学 2015-05-14 Mikito Koshino , Edward McCann
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