相关论文: Tunneling-induced fractal transmission in Valley H…
A large set of recent experiments has been exploring topological transport in bosonic systems, e.g. of photons or phonons. In the vast majority, time-reversal symmetry is preserved, and band structures are engineered by a suitable choice of…
We consider wave propagation across an infinite waveguide of an arbitrary bounded cross-section, whose interior is blocked by two identical thick barriers with holes. When the holes are small, the waves over a broad range of frequencies are…
We study the amount of backscattering of Valley Hall modes in a classical topological insulator. In reciprocal systems, the conservation of the valley index has been argued to be at the root of the high-transmission of Valley Hall modes,…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
We propose a geometric phase-resolved tunneling valley Hall effect based on the coherent transmission through two combined electric barriers in $\alpha-\mathcal{T}_3$ lattices. It is shown that the backreflected electrons at the barrier…
Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling…
We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…
The unique properties of light underpin the visions of photonic quantum technologies, optical interconnects, and a wide range of novel sensors, but a key limiting factor today is losses due to either absorption or backscattering on defects.…
Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by…
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley…
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…
The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized…
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can…
We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
We introduce a new mechanism that produces a Hall-like response in time-reversal-invariant materials, driven entirely by geometric effects. Specifically, we demonstrate that a tilted potential interface causes electron wave packets to…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a…
We study the effect of backward scatterings in the tunneling at a point contact between the edges of a second level hierarchical fractional quantum Hall states. A universal scaling dimension of the tunneling conductance is obtained only…
We consider transport in the Poissonian regime between edge states in the quantum Hall effect. The backscattering potential is assumed to be arbitrary, as it allows for multiple tunneling paths. We show that the Schottky relation between…