相关论文: Dynamic Write-Voltage Design and Read-Voltage Opti…

We consider data transmission across discrete memoryless channels (DMCs) using variable-length codes with feedback. We consider the family of such codes whose rates are $\rho_N$ below the channel capacity $C$, where $\rho_N$ is a positive…

In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…

This paper studies the impact of DRAM writes on DDR5-based system. To efficiently perform DRAM writes, modern systems buffer write requests and try to complete multiple write operations whenever the DRAM mode is switched from read to write.…

This work considers optimizing LDPC codes in the physical-layer network coded two-way relay channel using noncoherent FSK modulation. The error-rate performance of channel decoding at the relay node during the multiple-access phase was…

For efficient modulation and error control coding, the deliberate flipping approach imposes the run-length-limited(RLL) constraint by bit error before recording. From the read side, a high coding rate limits the correcting capability of RLL…

Neuromorphic computing with non-volatile memory (NVM) can significantly improve performance and lower energy consumption of machine learning tasks implemented using spike-based computations and bio-inspired learning algorithms. High…

Emerging non-volatile main memory (NVRAM) technologies provide byte-addressability, low idle power, and improved memory-density, and are likely to be a key component in the future memory hierarchy. However, a critical challenge in achieving…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold (RDT) (e.g., the number of aggressor row activations…

Solid-state storage architectures based on NAND or emerging memory devices (SSD), are fundamentally architected and optimized for both reliability and performance. Achieving these simultaneous goals requires co-design of memory components…

Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…

SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…

A method for estimating the performance of low-density parity-check (LDPC) codes decoded by hard-decision iterative decoding algorithms on binary symmetric channels (BSC) is proposed. Based on the enumeration of the smallest weight error…

This article summarizes key results of our work on experimental characterization and analysis of latency variation and latency-reliability trade-offs in modern DRAM chips, which was published in SIGMETRICS 2016, and examines the work's…

Hypergraph products are quantum low-density parity-check (LDPC) codes constructed from two classical LDPC codes. Although their dimension and distance depend only on the parameters of the underlying classical codes, optimizing their…

Cascaded circuits such as modular multilevel con-verters (MMC) offer attractive qualities in reconfigurable battery applications. In contrast to conventional hard-wired dc battery packs, the MMC topology loads modules with ac current, which…

Reading several ReRAMs simultaneously in a neuromorphic circuit increases power consumption and limits scalability. Applying small inference read pulses is a vain attempt when offset voltages of the read-out circuit are decisively more.…

CMOS VLSI technology is the most dominant integration methodology prevailing in the world today. Various signal-processing blocks are made using analog or digital design techniques in MOS VLSI. An important component is the Memory unit used…

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature…

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks…