相关论文: Electrically function switchable magnetic domain-w…
A skyrmion is a topological texture in the continuum field theory. Recent experimental observation of skyrmions in chiral magnet evokes a flourish of its extensive study. Skyrmion is expected to be a key component of the next generation…
Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF…
A quantum memory that can store quantum states faithfully and retrieve them on demand has wide applications in quantum information science. An efficient quantum memory in the microwave regime working alongside quantum processors based on…
The Big Data revolution has heightened the demand for robust, energy-efficient security hardware capable of withstanding increasingly sophisticated cyber threats. Conventional encryption schemes, reliant on complex algorithms, are…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and…
Memory management is necessary with the increasing number of multi-connected AI devices and data bandwidth issues. For this purpose, high-speed multi-port memory is used. The traditional multi-port memory solutions are hard-bounded to a…
A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate of a memory cell for future nonvolatile data storage devices. Thus, understanding of the stability and dynamical behaviour of…
Interconnected magnetic nanowire (NW) networks offer a promising platform for 3-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire…
As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…
Antiferromagnets offer remarkable promise for future spintronics devices, where antiferromagnetic order is exploited to encode information. The control and understanding of antiferromagnetic domain walls (DWs) - the interfaces between…
A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…
The realization of scalable quantum networks for distribution of entanglement over long distances hinges on quantum repeaters. To outperform the exponential transmission loss in optical fibers, quantum repeaters must employ multiplexing…
A moving magnetic domain wall produces an electromotive force (emf). It is therefore possible to read the state of a magnetic memory device via the emf it produces when subject to an interrogation pulse. It is also possible to amplify…
Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W)…
Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to achieve low-power intelligent devices. To realize NC, researchers investigate various types of synthetic neurons and synaptic devices such as memristors and…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device…