相关论文: Electrically function switchable magnetic domain-w…
By performing numerical simulations for the handwritten digit recognition task, we demonstrate that a magnetic skyrmion lattice confined in a thin-plate magnet possesses high capability of reservoir computing. We obtain a high recognition…
Magnonics, which employs spin-waves to transmit and process information, is a promising venue for low-power data processing. One of the major challenges is the local control of the spin-wave propagation path. Here, we introduce the concept…
We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall…
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied…
Microwave storage and retrieval are essential capabilities for superconducting quantum circuits. Here, we demonstrate an on-chip multimode resonator in which strong parametric modulation induces a large and tunable normal-mode splitting…
The lack of dense random access memory is one of the main bottlenecks for the creation of a digital superconducting computer. In this work we study experimentally vortex-based superconducting memory cells. Three main results are obtained.…
A resistive memory network that has no crossover wiring is proposed to overcome the hardware limitations to size and functional complexity that is associated with conventional analogue neural networks. The proposed memory network is based…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
We predict a spatially localized magnetic domain wall oscillator upon the application of an external magnetic field and a DC electric current. The amplitude and frequency of the oscillator can be controlled by the field and/or the current.…
A bistable micro-mechanical system based on magnetic repulsion is presented exploring its applicability as memory unit where the state of the bit is encoded in the rest position of a deflected cantilever. The non-linearity induced on the…
This work demonstrates that porous helical WOx architectures enable a distinct low-power regime for planar ITO/WOx/ITO resistive random-access devices. While thin film and helical devices behave similarly at a 5 mA compliance, only helical…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…
Different real-world cognitive tasks evolve on different relevant timescales. Processing these tasks requires memory mechanisms able to match their specific time constants. In particular, the working memory utilizes mechanisms that span…
A long-standing goal in the field of "mechanical computing" is the creation of truly reprogrammable mechanical structures, where the function of each unit can be dynamically defined, modified, and accessed on demand, much like rewriting…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
Current-induced motion of domain walls (CIMDW) with interfacial Dzyaloshinskii-Moriya interaction (DMI) in heavy metal (HM)/ferromagnetic (FM) metal multilayers have attracted attention owing to their potential application in novel magnetic…
A content-addressable-memory compares an input search word against all rows of stored words in an array in a highly parallel manner. While supplying a very powerful functionality for many applications in pattern matching and search, it…