相关论文: Electrically function switchable magnetic domain-w…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic…
Precise control of magnetic domain formation at the nanoscale remains constrained by stochastic defect-mediated and unstable pinning, limiting scalability and reproducibility in spintronic architectures. Here we demonstrate that spatially…
Next-generation concepts for solid-state memory devices are based on current-driven domain wall propagation, where the wall velocity governs the device performance. It has been shown that the domain wall velocity and the direction of travel…
The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external…
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been…
All-spin-based computing combining logic and nonvolatile magnetic memory is promising for emerging information technologies. However, the realization of a universal spin logic operation representing a reconfigurable building block with…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
The highest-density magnetic storage media will code data in single-atom bits. To date, the smallest individually addressable bistable magnetic bits on surfaces consist of 5-12 atoms. Long magnetic relaxation times were demonstrated in…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
In the last decade, two revolutionary concepts in nano magnetism emerged from research for storage technologies and advanced information processing. The first suggests the use of magnetic domain walls (DWs) in ferromagnetic nanowires to…
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…
Generating spintronic devices has been a goal for the nano-science. We have used density function theory to determine magnetic phases of single layer and bilayer lithium doped graphene nanoflakes. We have introduced graphene flakes as…