相关论文: Strain effects in phosphorous bound exciton transi…
Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating…
A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…
We show how to achieve optical, spin-selective transitions from the ground state to excited orbital states of group-V donors (P, As, Sb, Bi) in silicon. We consider two approaches based on either resonant, far-infrared (IR) transitions of…
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…
Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum…
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in…
It is shown that coherent spin motion of electron-hole pairs localized in band gap states of silicon can influence charge carrier recombination. Based on this effect, a readout concept for silicon based solid-state spin--quantum computers…
Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes.…
We theoretically investigate the spin structure and spin dynamics of excitons in bulk lead halide perovskite semiconductors with cubic, tetragonal, and orthorhombic crystal symmetry. The exciton spin structure and its modification by an…
Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear…
We model spin blockade for optically excited electrons and holes in a charged semiconductor quantum dot. We study the case where the quantum dot is initially charged with a single electron and is then filled with an additional, optically…
We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin…
Owing to exchange interaction between the exciton and magnetic ion, a quantum dot embedding a single magnetic ion is a great platform for optical control of individual spin. In particular, a quantum dot provides strong and sharp optical…
The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect…
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the…
We present a theory of the acoustic phonon assisted spin-flip Raman scattering (SFRS), or resonant photoluminescence with the spin flip of a photoexcited exciton localized in a bulk cubic-phase perovskite semiconductor. We consider the…
Electron-hole bound pairs, or excitons, are common excitations in semiconductors. They can spontaneously form and ``condense'' into a new insulating ground state -- the so-called excitonic insulator -- when the energy of electron-hole…
Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviolet. This luminescence originates from bound excitons recombination assisted by different phonon modes. The coupling between excitons and…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley…