相关论文: Strain effects in phosphorous bound exciton transi…

The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear…

Proposed Silicon-based quantum computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing infrastructure of…

Dispersive readout of superconducting qubits is often limited by readout-drive-induced transitions between qubit levels. While there is a growing understanding of such effects in transmon qubits, the case of highly nonlinear fluxonium…

We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra…

The properties of excitons, or correlated electron-hole pairs, are of paramount importance to optoelectronic applications of materials. A central component of exciton physics is the electron-hole interaction, which is commonly treated as…

We show that the coupling to vibrational degrees of freedom can drive a semimetal excitonic-insulator quantum phase transition in an one-dimensional two-band f-c electron system at zero temperature. The insulating state typifies an…

We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$…

Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its…

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it…

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…

Resonant interaction between excitonic transitions of molecules and localized electromagnetic field allows the formation of hybrid light-matter polaritonic states. This hybridization of the light and the matter states has been shown to be…

The ability to probe the spin properties of solid state systems electrically underlies a wide variety of emerging technology. Here, we extend electrical readout of the nuclear spin states of phosphorus donors in silicon to the coherent…

An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast to the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of…

We study the effect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in different kinds of semiconductor quantum dots (QDs). We find that the light polarization rotates by up to 80 degree and the…

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced…

Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating…

Optically addressable spin defects in hexagonal boron nitride hold promise for room-temperature quantum technologies, but their microscopic identities remain largely unknown. Using first principles calculations, we show that coupled spin…

The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature…

We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven…

Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of…