相关论文: Layer-Polarized Anomalous Hall Effect in Valleytro…
Layer-polarized anomalous Hall effect (LP-AHE) is an attractive phenomenon in condensed-matter physics from the standpoints of both fundamental interest and device applications. The current LP-AHE research is based on the extrinsic paradigm…
The valley-polarized quantum anomalous Hall effect (VQAHE) attracts intensive interest since it uniquely combines valleytronics and spintronics with nontrivial band topology. Here, based on first-principles calculations and…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)].…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
Two-dimensional van der Waals materials offer a highly tunable platform for generating emergent quantum phenomena through symmetry breaking. Stacking-induced symmetry breaking at interfaces provides an effective method to modulate their…
We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…
The electrical Hall effect is the production of a transverse voltage under an out-of-plane magnetic field. Historically, studies of the Hall effect have led to major breakthroughs including the discoveries of Berry curvature and the…
The electronic transport characteristics of two-dimensional (2D) systems have widespread application prospects in the fabrication of multifunctional nanodevices. However, the current research for basic transport phenomena, such as anomalous…
In the anomalous Hall effect (AHE), the magnetization, electric field and the Hall current are presumed to be mutually vertical to each other. In this work, we propose an unconventional AHE where the magnetization, the electric field and…
Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to…
Orbitronics, which leverages the angular momentum of atomic orbitals for information transmission, provides a novel strategy to overcome the limitations of electronic devices. Unlike electron spin, orbital angular momentum (OAM) is strongly…
The anomalous Hall effect (AHE) has been extended into the nonlinear regime, where the Hall voltage shows higher-order response to the applied current. Nevertheless, the microscopic mechanism of the nonlinear AHE remains unclear. Here we…
We propose a novel nonlinear dynamical Hall effect characteristic of layered materials with chiral symmetry, which is driven by the joint action of in-plane and time variation of out-of-plane ac fields…
Recent experimental and theoretical studies have revealed the emergence of a linear layer Hall effect (LHE) induced by hidden Berry curvature in \textrm{MnBi}$_{2}$\textrm{Te}$_{4}$ thin films. This phenomenon underscores the layer degree…
The Hall effect occurs only in systems with broken time-reversal symmetry, such as solids under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE). Here we show a new Hall effect…
The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521…
We uncover a new origin of the planar Hall effect - as an intrinsic property of layer coherent electrons - that exists even in bilayer and trilayer atomically thin limit. It reforms the existing theories requiring three-dimensional orbital…
The planar Hall effect (PHE) is the appearance of an in-plane transverse voltage in the presence of coplanar electric and magnetic fields. Its hallmark is a characteristic $\pi$-periodic, i.e. even under a magnetic field reversal, angular…