相关论文: Defect Profiling of Oxide-Semiconductor Interfaces…

In order to expand the applicability of muon spin rotation, relaxation, and resonance ($\mu$SR) experiments with pulsed muons and to make effective use of the high-flux beam, we have developed a new experimental method ``transient…

Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…

Pressure, together with temperature, electric and magnetic fields, alters the system and allows to investigate the fundamental properties of the matter. Under applied pressure the interatomic distances shrink, which modify interactions…

Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon…

We present the results of muon-spin relaxation measurements of spin excitations in the one-dimensional quantum Heisenberg antiferromagnet Cu(pyz)(NO$_{3}$)$_{2}$. Using density-functional theory we propose muon sites and assess the degree…

We report on the local electronic structure of interstitial muon (Mu) as pseudo-hydrogen in In-Ga-Zn oxide (IGZO) semiconductor studied by muon spin rotation/relaxation ($\mu$SR) experiment. In polycrystalline (c-) IGZO, it is inferred that…

The path toward Li-ion batteries with higher energy-densities will likely involve use of thin lithium metal (Li) anode (<50 $\mu$m in thickness), whose cyclability today remains limited by dendrite formation and low Coulombic efficiency.…

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains…

In positive muon spin rotation and relaxation ($\mu^+$SR) spectroscopy, positive muons ($\mu^+$) implanted into solid oxides are conventionally treated as immobile spin-probes at interstitial sites below room temperature. This is because…

Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…

A long-standing limitation of semiconductor neutron detectors is the lack of a scalable solution to make large area instruments. Neutron detectors are used in a wide range of applications, including the nuclear industry, safeguarding…

Vertex-reconstructed muon-spin spectroscopy (vx-{\mu}SR) based on silicon pixel detectors has recently demonstrated unprecedented lateral resolution and operation at muon stop rates exceeding 400 kHz. However, the intrinsic timing…

Due to the high penetrating power of cosmic ray muons, they can be used to probe very thick and dense objects. As charged particles, they can be tracked by ionization detectors, determining the position and direction of the muons. With…

We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two…

Electronic and dielectric properties of vapor-phase grown MoS_{2} have been investigated in metal/MoS_{2}/silicon capacitor structures by capacitance-voltage and conductancevoltage techniques. Analytical methods confirm the MoS_{2} layered…

We have used the technique of low energy muon spin rotation to measure the local magnetic field profile B(z) beneath the surface of a lead film maintained in the Meissner state (z depth from the surface, z <= 200 nm). The data unambiguously…

We performed muon spin rotation and relaxation ($\mu$SR) experiments to investigate the microscopic mechanism behind the high ionic conductivity ($\sigma$) exhibited by hydride (H$^-$) ions in lanthanum hydroxide LaH$_{3-2x}$O$_x$. The…

The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…

Muon-spin rotation (muSR) experiments are often used to study the magnetic field distribution in type-II superconductors in the vortex state. Based on the determination of the magnetic penetration depth it is frequently speculated---also…

We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by combining X-ray photoelectron spectroscopy (XPS) and…