相关论文: Dielectric constant of gray Tin: A first-principle…
By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a…
Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly…
Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in…
Ge$_{1-x}$Sn$_{x}$ alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here, we present a combined theoretical and experimental analysis…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…
We compute the tunneling conductance of graphene as measured by a scanning tunneling microscope (STM) with a normal/superconducting tip. We demonstrate that for undoped graphene with zero Fermi energy, the first derivative of the tunneling…
An ideal solar thermal absorber has a sharp transition between high and low absorptance at the wavelength where the blackbody emissive power begins to exceed the solar irradiance. However, most real selective absorbers have a fairly broad…
The dielectric properties of alpha-MgH2 are investigated in the photon energy range between 1 and 6.5 eV. For this purpose, a novel sample configuration and experimental setup are developed that allow both optical transmission and…
We have studied the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory. For InN our approach predicts a gap of 0.7 eV. Taking the Burnstein-Moss effect into account, the…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…
This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic…
We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion…
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in…
Graphene, as a material with a small intrinsic spin-orbit interaction of approximately 1 $\mu$eV, has a limited application in spintronics. Adsorption of graphene on the surfaces of heavy-metals was proposed to induce the strong…
A novel material consisting of a monolayer of C$_{60}$ buckyballs with hexagonal symmetry has recently been observed experimentally, named graphullerene. In this study, we present a comprehensive \textit{ab-initio} theoretical analysis of…
Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer $\delta$-doping of {\em interstitial} Mn (Mn$_{\mathrm int}$) are half-metallic. For Mn$_{\mathrm int}$…
Coordination compounds with tin centre surrounded by both organic and inorganic ligands ([SnI4{(C6H5)3PO}2], [SnI4{(C6H5)2SO}2] and [SnI4(C5H5NO)2]), acting as molecular semiconductors are in the spotlight of this article. This is a new…
We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an $\alpha$-Ga$_2$O$_3$ thin film. The sample is grown epitaxially by…
We report measurements of the electrical resistivity ($\rho$) and thermoelectric power (S) in a thin film of strained single-crystalline $\alpha$-Sn grown by molecular beam epitaxy on an insulating substrate. The temperature (T) dependence…
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain…