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相关论文: Dynamics of hydrogen in silicon at finite temperat…

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Molecular hydrogen in silicon has been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic…

材料科学 · 物理学 2009-07-31 Carlos P. Herrero , Rafael Ramirez

This paper presents an $ab$ $initio$ study of hydrogen dynamics inside nanometer-size voids in $a$-Si within the framework of the density-functional theory for a varying hydrogen load of 10 to 30 H atoms/void at the low and high temperature…

材料科学 · 物理学 2021-10-04 Parthapratim Biswas , Dil Limbu

We report first principles ab initio density functional calculations of hydrogen dynam- ics in hydrogenated amorphous silicon. Thermal motion of the host Si atoms drives H diffusion, as we demonstrate by direct simulation and explain with…

材料科学 · 物理学 2009-11-11 T. A. Abtew , F. Inam , D. A. Drabold

We use {\it ab initio} molecular dynamics simulations to study a sample of liquid silica containing 3.84 wt.% H$_2$O.We find that, for temperatures of 3000 K and 3500 K,water is almost exclusively dissolved as hydroxyl groups, the silica…

无序系统与神经网络 · 物理学 2009-11-10 Markus Poehlmann , Magali Benoit , Walter Kob

Thermal electron emission process of a hydrogen impurity is an important topic of fundamental semiconductor physics. Despite of decades-long study, theory is not established yet. Here, we study the process of $\mathrm{H}^{-}$ in silicon,…

材料科学 · 物理学 2020-05-29 Yoshiyuki Yamamoto , Alpin Novianus Tatan , Osamu Sugino

Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films…

材料科学 · 物理学 2014-06-04 Z. A. Ibrahim , A. I. Shkrebtii , F. Zimmer-de Iuliis , F. Gaspari

We present a path-integral Monte Carlo study of dissociation in dense hydrogen ($1.75 \leq r_s \leq 2.2$, with $r_s$ the Wigner sphere radius). As temperature is lowered from $10^5$ to 5000 K, a molecular hydrogen gas forms spontaneously…

凝聚态物理 · 物理学 2009-10-28 W. R. Magro , D. M. Ceperley , C. Pierleoni , B. Bernu

The study of the formation of molecular hydrogen on low temperature surfaces is of interest both because it allows to explore elementary steps in the heterogeneous catalysis of a simple molecule and because of the applications in…

化学物理 · 物理学 2008-11-21 G. Vidali , V. Pirronello , L. Li , J. Roser , G. Manico , R. Mehl , A. Lederhendler , H. B. Perets , J. R. Brucato , O. Biham

The paper presents an $ab$ $initio$ study of temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon. By using large $a$-Si models, obtained from classical molecular-dynamics simulations, with a realistic…

材料科学 · 物理学 2019-11-19 Parthapratim Biswas , Durga Paudel , Raymond Atta-Fynn , Stephen R. Elliott

The reported diffusion constants for hydrogen in silicon vary over six orders of magnitude. This spread in measured values is caused by the different concentrations of defects in the silicon that has been studied. Hydrogen diffusion is…

Experimental results on the formation of molecular hydrogen on amorphous silicate surfaces are presented for the first time and analyzed using a rate equation model. The energy barriers for the relevant diffusion and desorption processes…

In this paper we present kinetic properties such as migration and decomposition barriers of hydrogen defects in silicon calculated by Density Functional Theory (DFT) based methods. We study the following defects: H atoms (H) and ions (H+,…

材料科学 · 物理学 2011-11-29 Liviu Bilteanu , Mathias Posselt , Jean-Paul Crocombette

The model of hydrogen migration and of the reactions of hydrogen atoms with electrically active impurity, developed earlier, has been applied to simulate hydrogen diffusion and passivation process during plasma deuteration of silicon…

材料科学 · 物理学 2015-06-12 O. I. Velichko , Yu. P. Shaman , A. P. Kovaliova

Using a quantum-mechanical close-coupling method, we calculate cross sections for fine structure excitation and relaxation of Si and S atoms in collisions with atomic hydrogen. Rate coefficients are calculated over a range of temperatures…

原子物理 · 物理学 2024-12-10 Pei-Gen Yan , James F. Babb

Tight binding molecular dynamics simulations, with a non orthogonal basis set, are performed to study the fragmentation of carbon fullerenes doped with up to six silicon atoms. Both substitutional and adsorbed cases are considered. The…

材料科学 · 物理学 2009-11-07 Chu-Chun Fu , Javier Fava , Ruben Weht , M. Weissmann

Silicon, despite its abundance and high energy density, remains underexplored as a carbon-free fuel, with limited data available on its combustion characteristics. In this work, the combustion behaviour of silicon particles is examined…

应用物理 · 物理学 2025-09-30 Herman , Heng , Hugo Keck , Christian Chauveau , Samuel Goroshin , Jeffrey Bergthorson , Fabien Halter

A possible formation mechanism of hydrogen molecules on a galactic scale is examined. We are interested especially in the role of hydrogen molecules for formation and evolution of primordial galaxies. Then, formation process of hydrogen…

天体物理学 · 物理学 2015-06-24 Hideyuki Kamaya , Hiroyuki Hirashita

We have developed a model for molecular hydrogen formation under astrophysically relevant conditions. This model takes fully into account the presence of both physisorbed and chemisorbed sites on the surface, allows quantum mechanical…

天体物理学 · 物理学 2009-11-07 S. Cazaux , A. G. G. M. Tielens

Silicon is present in interstellar dust grains, meteorites and asteroids, and to date thirteen silicon-bearing molecules have been detected in the gas-phase towards late-type stars or molecular clouds, including silane and silane…

Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is however unstable with regards to hydrogen (H)…

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