相关论文: Strain driven conducting domain walls in a Mott in…
Understanding the domain wall (DW) dynamics in magnetic nanowires (NW) is crucial for spintronic-based applications demanding the use of DWs as information carriers. This work focuses on the dynamics of a DW displacing along a bent NW with…
Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence…
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…
Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…
Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…
This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…
A 2D electron system in a quantized magnetic field can be driven by microwave radiation into a non-equilibrium state with strong magnetooscillations of the dissipative conductivity. We demonstrate that in such system a negative conductivity…
Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that…
Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and…
Many Mott systems feature a first-order metal-insulator transition at finite temperatures, with an associated phase coexistence region displaying inhomogeneities and local phase separation. Here one typically finds "bubbles" or domains of…
Spin waves are perturbations in the relative orientation of magnetic moments in a continuous magnetic system, which have been proposed as a new kind of information carrier for spin-based low power applications. For this purpose, a major…
We demonstrate that for multilayered magnetic nanowires, where the thickness and composition of the individual layers has been carefully chosen, domain walls can be pinned at non-topographic sites created purely by ion irradiation in a…
Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and…
Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in…
We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. The stripes have been…
Charge-neutral 180$^\circ$ domain walls that separate domains of antiparallel polarization directions are common structural topological defects in ferroelectrics. In normal ferroelectrics, charged 180$^\circ$ domain walls running…
Domain wall propagation in modulated-diameter cylindrical nanowires is a key phenomenon to be studied with a view to designing three-dimensional magnetic memory devices. This paper presents a theoretical study of transverse domain wall…
Ferroelectricity in atomically thin bilayer structures has been recently predicted1 and measured[2-4] in two-dimensional (2D) materials with hexagonal non-centrosymmetric unit-cells. Interestingly, the crystal symmetry translates lateral…
The coupling between antiferrodistortion (AFD) and ferroelectric (FE) polarization, universal for all tilted perovskite multiferroics, is known to strongly correlate with domain wall functionalities in the materials. The intrinsic…
Experiments on optical and STM injection of carriers in layered $\mathrm{MX_2}$ materials revealed the formation of nanoscale patterns with networks and globules of domain walls. This is thought to be responsible for the metallization…