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We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

The antiferromagnetic ground state of the half-filled Hubbard model with the doubly degenerate orbital has been studied by using the slave-boson mean-field theory which was previously proposed by the present author. Numerical calculations…

强关联电子 · 物理学 2009-10-30 Hideo Hasegawa

A realization of heavy fermion state is investigated on the basis of two-band Hubbard model. By means of the slave-boson mean-field approximation, it is shown that for the intermediate electron density, n_e=1.5, the inter-band Coulomb…

强关联电子 · 物理学 2009-10-31 H. Kusunose , S. Yotsuhashi , K. Miyake

We use the Kotliar-Ruckenstein slave-boson formalism to study the temperature dependence of paramagnetic phases of the one-band Hubbard model for a variety of band structures. We calculate the Fermi liquid quasiparticle spectral weight $Z$…

强关联电子 · 物理学 2017-07-19 Alejandro Mezio , Ross H. McKenzie

We investigate the paramagnetic-metal-to-antiferromagnetic-metal and antiferromagnetic-metal-to- antiferromagnetic-insulator transitions using a slave-boson mean-field theory. To this effect, we discuss the ground state of the half-filled…

强关联电子 · 物理学 2009-10-31 Imseok Yang , Ekkehard Lange , Gabriel Kotliar

A systematic study has been made on the metal-insulator (MI) transition of the doubly degenerate Hubbard model (DHM) in the paramagnetic ground state, by using the slave-boson mean-field theory which is equivalent to the Gutzwiller…

强关联电子 · 物理学 2009-10-30 Hideo Hasegawa

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…

强关联电子 · 物理学 2018-08-30 Caterina De Franco , Luca F. Tocchio , Federico Becca

A slave boson representation for the degenerate Hubbard model is introduced. The location of the metal to insulator transition that occurs at commensurate densities is shown to depend weakly on the band degeneracy M. The relative weights of…

强关联电子 · 物理学 2016-08-31 Raymond Fresard , Gabriel Kotliar

We supplement (and critically overview) the existing extensive analysis of antiferromagnetic solution for the Hubbard model with a detailed discussion of two specific features, namely (i) the evolution of the magnetic (Slater) gap (here…

强关联电子 · 物理学 2016-08-16 P. Korbel , W. Wójcik , A. Klejnberg , J. Spalek , M. Acquarone , M. Lavagna

We apply the slave-boson approach of Kotliar and Ruckenstein to the two-band Hubbard model with an Ising like Hund's rule coupling and bands of different widths. On the mean-field level of this approach we investigate the Mott transition…

强关联电子 · 物理学 2009-11-25 A. Rüegg , M. Indergand , S. Pilgram , M. Sigrist

We propose a multi-band Fermi-Bose Hubbard model with on-site fermion-boson conversion and general filling factor in three dimensions. Such a Hamiltonian models an atomic Fermi gas trapped in a lattice potential and subject to a Feshbach…

其他凝聚态物理 · 物理学 2009-11-11 L. D. Carr , M. J. Holland

We study a two-band Hubbard model using the dynamical mean-field theory combined with the exact diagonalization method. At the electron density $n=2$, a transition from a band-insulator to a correlated semimetal occurs when the on-site…

强关联电子 · 物理学 2007-05-23 Y. Ono , K. Sano

We study the ground state of the Hubbard model on a square lattice with two degenerate orbitals per site and at integer fillings as a function of onsite Hubbard repulsion $U$ and Hund's intra-atomic exchange coupling $J$. We use a…

强关联电子 · 物理学 2021-12-08 Arun Kumar Maurya , Md. Tahir Hossain Sarder , Amal Medhi

We study the filling-driven Mott transition involving the metallic and paramagnetic insulating phases in SU(N) Fermi-Hubbard models, using dynamical mean-field theory (DMFT) and the numerical renormalization group (NRG) as impurity solver.…

强关联电子 · 物理学 2018-05-09 Seung-Sup B. Lee , Jan von Delft , Andreas Weichselbaum

We use the Kotliar-Ruckenstein slave boson technique to treat the strong correlation of the Hubbard model. In a first part we discuss the metal to insulator transition that is occurring on the honeycomb lattice at half filling. We find the…

凝聚态物理 · 物理学 2007-05-23 Raymond Fresard , Klaus Doll

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

强关联电子 · 物理学 2022-12-06 Yueqi Li , Lingyu Tian , Tianxing Ma , Hai-Qing Lin

The mass-imbalanced Hubbard model represents a continuous evolution from the Hubbard to the Falicov-Kimball model. We employ dynamical mean field theory and study the paramagnetic metal-insulator transition, which has a very different…

强关联电子 · 物理学 2017-06-29 Marie-Therese Philipp , Markus Wallerberger , Patrik Gunacker , Karsten Held

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

We study the magnetic field driven metal-to-insulator transition in half-filled Hubbard model on the Bethe lattice, using the dynamical mean-field theory by solving the quantum impurity problem with density-matrix renormalization group…

强关联电子 · 物理学 2017-09-13 W. Zhu , D. N. Sheng , Jian-Xin Zhu
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