相关论文: Hall coefficient in amorphous alloys: critical beh…
At sufficiently low temperatures, many quantum effects, such as weak localization, electron-electron interaction (EEI), and Kondo screening, can lead to pronounced corrections to the semiclassical electron transport. Although low…
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…
In this paper, we report the measurements of specific heat of an amorphous $Ti_{9.5}Si_{90.5}$ alloy located very close to the critical point of the metal-insulator transition. In the presence of a magnetic field, the specific heat is…
Precision measurements of the Hall effect have been carried out for both archetypal heavy fermion compound - CeCu6 and exemplary solid solutions CeCu6-xAux (x= 0.1 and 0.2) with quantum critical behavior. The experimental results have been…
Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the…
The creation of topologically non-trivial matter across electronic, mechanical, cold-atom, and photonic platforms is advancing rapidly, yet understanding the breakdown of topological protection remains a major challenge. In this work, we…
Quantized anomalous Hall effects (QAHEs) occur in remarkable electronic states which possess not only quantized Hall signals but in some cases regions of dissipationless electron transport. The initial demonstrations of a QAHE in a…
The Hall conductivity in a weak homogeneous magnetic field, $\omega_{c}\tau \ll 1$, is calculated. We have shown that to leading order in $1/\epsilon_{F}\tau$ the Hall coefficient $R_{H}$ is not renormalized by the electron-electron…
Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to…
We develop a systematic theory of the Hall effect in Q1D conductors in both weak and strong magnetic fields for a model where the electron relaxation time varies over the Fermi surface. At high temperatures, the Hall coefficient saturates…
We present calculations of the spin and phase relaxation rates in GaAs/AlGaAs $p$-type quantum wells. These rates are used to derive the temperature dependence of the weak-localization correction to the conductivity. In $p$-type quantum…
We investigate the effect of electron-electron interaction on the temperature dependence of the Hall coefficient of 2D electron gas at arbitrary relation between the temperature $T$ and the elastic mean-free time $\tau$. At small…
The microstructure and electrical transport of Cr$_x$(SiO$_2$)$_{1-x}$ nanogranular films with Cr volume faction $x$$\simeq$0.67 and 0.72 are systematically investigated. The transmission electron microscopy images and elemental mappings…
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers…
We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity…
We consider the Anomalous Hall Effect (AHE) in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for…
The Hall coefficient (R_H) of high-Tc cuprates in the normal state shows the striking non-Fermi liquid behavior: R_H follows a Curie-Weiss type temperature dependence, and |R_H|>>1/|ne| at low temperatures in the under-doped compounds.…
The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However,…
Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene…
The anomalous Hall effect in a multiband tight-binding model is numerically studied taking into account both elastic scattering by disorder and inelastic scattering by the electron-phonon interaction. The Hall conductivity is obtained as a…