中文
相关论文

相关论文: Black Phosphorus n-type doping by Cu: a microscopi…

200 篇论文

The effects of doping on the electronic evolution of the Mott insulating state have been extensively studied in efforts to understand mechanisms of emergent quantum phases of materials. The study of these effects becomes ever more…

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

强关联电子 · 物理学 2011-07-12 Reza Nourafkan , Frank Marsiglio

The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature…

材料科学 · 物理学 2014-04-22 H. Y. Lv , W. J. Lu , D. F. Shao , Y. P. Sun

In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an initial period of 18 h, before degrading to previously reported…

材料科学 · 物理学 2016-07-21 Yuchen Du , Lingming Yang , Hong Zhou , Peide D. Ye

Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the…

介观与纳米尺度物理 · 物理学 2016-06-29 N. Borgwardt , J. Lux , I. Vergara , Zhiwei Wang , A. A. Taskin , Kouji Segawa , P. H. M. van Loosdrecht , Yoichi Ando , A. Rosch , M. Grüninger

When channels were scaled down to the size of hydrated ions, ionic Coulomb blockade was discovered. However, the experimental CB phenomenon was rarely reported since Feng et.al., discovered in MoS2 nanopore. By using latent-track membranes…

软凝聚态物质 · 物理学 2022-11-18 Yanbo Xie , Deli Shi , Wenhui Wang , Ziheng Wang

The thermodynamic impact of the Coulomb repulsion on s-wave superconductors is analyzed via a rigorous study of equilibrium and ground states of the strong coupling BCS-Hubbard Hamiltonian. We show that the one-site electron repulsion can…

数学物理 · 物理学 2016-08-31 J. -B. Bru , W. de Siqueira Pedra

Pb doping effect in the Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$ compound (Bi2223) on the structural and electronic properties were investigated, using the Local Density (LDA) and Virtual Crystal (VCA) approximations within the framework of the…

强关联电子 · 物理学 2016-03-23 J. A. Camargo-Martínez , R. Baquero

Black phosphorus has attracted great research interest due to its numerous applications in electronic devices, optoelectronic devices, energy storages and so on. Compared with the majority of two-dimensional materials, black phosphorus…

介观与纳米尺度物理 · 物理学 2019-10-02 Zhen Tian , Yu Gan , Taiming Zhang , Binbin Wang , Hengxing Ji , Yexin Feng , Jiamin Xue

Atomic structure of single-crystalline black phosphorus was studied by high resolution synchrotron-based photoelectron diffraction (XPD). The results show that the topmost phosphorene layer in the black phosphorus is slightly displaced…

材料科学 · 物理学 2016-02-03 Luis Henrique de Lima , Lucas Barreto , Richard Landers , Abner de Siervo

We present polarization-resolved transient transmission measurements on multi-layer black phosphorus. Background free two-color pump-probe spectroscopy measurements are carried out on mechanically exfoliated black phosphorus flakes that…

材料科学 · 物理学 2015-08-25 Ryan J. Suess , Mohammad M. Jadidi , Thomas E. Murphy , Martin Mittendorff

We explain the robust p-type doping observed for quasi-free standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal…

材料科学 · 物理学 2015-05-30 J. Ristein , S. Mammadov , Th. Seyller

Controlled doping and understanding its underlying microscopic mechanisms is crucial for advancement of nanoscale electronic technologies, especially in semiconducting single-wall carbon nanotubes (s-SWNTs), where adsorbed counterions are…

材料科学 · 物理学 2023-09-06 Klaus H. Eckstein , Tobias Hertel

Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…

介观与纳米尺度物理 · 物理学 2020-09-11 Tomáš Škereň , Sigrun Köster , Bastien Douhard , Claudia Fleischmann , Andreas Fuhrer

The polymer (PBDTTT-c) p-doped with the molecular dopant (Mo(tfd-COCF3)3) exhibits a decline in transport properties at high doping concentrations, which limits the performance attainable through organic semiconductor doping. Scanning…

Renormalization of the Coulomb interaction in layered metals results in a strongly anisotropic plasma mode with low frequencies for small components of wave vector in the in-plane direction. Interaction of electrons with this mode was found…

超导电性 · 物理学 2007-05-23 S. N. Artemenko , S. V. Remizov

This work investigates a d-p Hubbard model by the n-pole approximation in the hole-doped regime. In particular, the spectral function $A(\omega,\vec{k})$ is analyzed varying the filling, the local Coulomb interaction and the $d-p$…

强关联电子 · 物理学 2015-05-19 E. J. Calegari , S. G. Magalhaes

Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate extensively this phenomenon using all-atom molecular dynamics of ionic transport…

介观与纳米尺度物理 · 物理学 2017-12-27 Hiroya Tanaka , Hideo Iizuka , Yuriy V. Pershin , Massimiliano Di Ventra

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily…

High-performance infrared photodetection underpins various applications spanning surveillance, environmental monitoring, optical communications and biomedical imaging. However, conventional bulk detectors remain limited by poor spectral…