相关论文: Deep-potential enabled multiscale simulation of ga…
In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by…
A biased tunnel junction between a superconductor and a normal metal can cool the latter electrode. Based on a recently developed cooler with high power and superior performance, we have successfully integrated it with a dielectric silicon…
The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor…
Graphene---hexagonal-boron-nitride---InSb near-field structures are designed and optimized to enhance the output power and energy efficiency of the thermophotovoltaic systems working in the temperature range of common industrial waste heat,…
Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite…
Graphane and graphene are both two-dimensional materials but of different bonding configurations, which can result in distinct thermal conduction properties. We simulate thermal conduction in graphane nanoribbons (GANRs) using the…
Solid heterostructures composed of substrates and epitaxial films are extensively used in advanced technologies, and their thermophysical properties fundamentally determine the performance, efficiency, reliability, and lifetime of the…
Impurity levels and formation energies of acceptors in wurtzite GaN are predicted ab initio. Be_Ga is found to be the shallow (thermal ionization energy $\sim$ 0.06 eV); $Mg_{Ga}$ and $Zn_{Ga}$ are mid-deep acceptors (0.23 eV and 0.33 eV…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…
We present an accurate interatomic potential for graphene, constructed using the Gaussian Approximation Potential (GAP) machine learning methodology. This GAP model obtains a faithful representation of a density functional theory (DFT)…
Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and…
Cubic boron arsenide (BAs) is promising for microelectronics thermal management due to its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure…
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two…
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…
Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. While passive cooling in graphene-based devices is quite effective due to graphene's extraordinary heat-conduction,…
Carbon-doped GaN is a promising material for sub-bandgap triggered optical switches. When incorporated in GaN, carbon introduces deep compensating centers that enable defect-mediated extrinsic photoconductivity. Here, we investigate the…
Computer simulations can provide mechanistic insight into ionic liquids (ILs) and predict the properties of experimentally unrealized ion combinations. However, ILs suffer from a particularly large disparity in the time scales of atomistic…
The reliability and safety of lithium-ion batteries can be affected by overheating issues. Phase change materials like paraffin due to their large heat capacities are among the best solutions for the thermal management of batteries. In this…
Graphene aerogel (GA) is a promising material for thermal management applications across many fields due to its lightweight and thermally insulative properties. However, standard values for important thermal properties, such as thermal…
The integration of optomechanics and optoelectronics in a single device opens new possibilities for developing information technologies and exploring fundamental phenomena. Gallium arsenide (GaAs) is a well-known material that can bridge…