相关论文: Study of neutron irradiation effects in Depleted C…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…

Thin pad detectors made from 75 $\mu$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that…

A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…

Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…

The reliable detection of neutrons in a harsh gamma-ray environment is an important aspect of establishing non-destructive methods for the characterization of spent nuclear fuel. In this study, we present results from extended in-situ…

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…

Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…

Characterization of strip and pixel AC-LGAD devices with both laser TCT and probe station (IV/CV) will be shown on AC-LGADs irradiated with 1 MeV reactor neutrons at JSI/Ljubljana and with 400~MeV protons at FNAL ITA to fluences from…

In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…

Low Gain Avalanche Detectors built on n-type substrate (nLGADs) have been developed by IMB-CNM to enhance the detection of low-penetrating particles, with a wide range of applications from medicine, industry to synergies with developments…

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…

In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences…

For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is…

The RENO experiment reports measured flux and energy spectrum of reactor electron antineutrinos\,($\overline{\nu}_e$) from the six reactors at Hanbit Nuclear Power Plant. The measurements use 966\,094\,(116\,111)\,$\overline{\nu}_e$…

We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from…

The presented study investigates the effects of low fluences from $5\times10^{12}$ up to $1\times10^{14}$ particles/cm$^{2}$ of 60MeV proton and neutron irradiation on n-type Low Gain Avalanche Detectors (nLGADs). An nLGAD is a silicon…

In this work, charge collection profiles of non-irradiated and irradiated 150 $\mu$m $p$-type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1…

This Letter reports the first scientific results from the observation of antineutrinos emitted by fission products of $^{235}$U at the High Flux Isotope Reactor. PROSPECT, the Precision Reactor Oscillation and Spectrum Experiment, consists…

In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in this study are circular 50 micro-meter thick Low-Gain…