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Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and…

介观与纳米尺度物理 · 物理学 2021-07-07 Swarnadip Mukherjee , Anuja Singh , Aditi Bodhankar , Bhaskaran Muralidharan

A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…

介观与纳米尺度物理 · 物理学 2024-05-14 Anuja Singh , Bhaskaran Muralidharan

Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures. Among these compounds, InAs/GaSb…

材料科学 · 物理学 2021-11-29 Shuiliu Fang , Ruiting Hao , Longgang Zhang , Jie Guo , Wuming Liu

By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…

其他凝聚态物理 · 物理学 2013-05-29 F. F. Schrey , L. Rebohle , T. Mueller , G. Strasser , K. Unterrainer , D. P. Nguyen , N. Regnault , R. Ferreira , G. Bastard

Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these…

In this work, three InAs/InAs$_{0.65}$Sb$_{0.35}$ superlattices with different periods were investigated using photoluminescence and photoreflectance measurements and their band structure was simulated using a 14 bulk-band kp model. The…

Using density functional theory, the structural and electronic-structure properties of a recently discovered, zero-dimensional antimony halide perovskite are studied. It is found that the herein considered material EtPySbBr$_\mathrm{6}$…

材料科学 · 物理学 2018-09-21 David A. Egger

The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of…

介观与纳米尺度物理 · 物理学 2020-07-08 Tomáš Rauch , Miguel A. L. Marques , Silvana Botti

We present a comprehensive study of the electronic structures of 192 configurations of 39 stable, layered, transition-metal dichalcogenides using density-functional theory. We show detailed investigations of their monolayer, bilayer, and…

应用物理 · 物理学 2017-11-10 M. Javaid , Salvy P. Russo , K. Kalantar-Zadeh , Andrew D. Greentree , Daniel W. Drumm

The energy bands and the global density of states are computed for superconductor / normal-metal superlattices in the clean limit. Dispersion relations are derived for the general case of insulating interfaces, including the mismatch of…

介观与纳米尺度物理 · 物理学 2007-05-23 Mihajlo Vanevic , Zoran Radovic

We present a comprehensive study of the electronic structure of the layered semiconductor InSe using density functional theory. We calculate the band structure of the monolayer and bulk material with the band gap corrected using hybrid…

材料科学 · 物理学 2017-09-20 Yuzheng Guo , John Robertson

We report on a theoretical study of the electronic structures of freestanding nanowires made from narrow band gap semiconductors GaSb, InSb and InAs. The nanowires are described by the eight-band k.p Hamiltonians and the band structures are…

介观与纳米尺度物理 · 物理学 2016-12-30 Ning Luo , Gaohua Liao , H. Q. Xu

The electronic energy band structure of strained and unstrained Si, Ge and SiGe alloys is examined in this work using thirty-level k.p analysis. The energy bands are at first obtained with ab initio calculations based on the…

材料科学 · 物理学 2007-05-23 D. Rideau , M. Feraille , L. Ciampolini , M. Minondo , C. Tavernier , H. Jaouen , A. Ghetti

The band structure of alfa-(Per)2M(mnt)2, leads to a description of these materials as nearly perfectly one dimensional conductors. The conduction is mainly along the stacking direction of the partially oxidized perylene molecules,…

强关联电子 · 物理学 2009-11-10 Enric Canadell , Manuel Almeida , James Brooks

We generate inherent structures, local potential-energy minima, of the "$k$-space overlap potential" in two-dimensional many-particle systems using a cooling and quenching simulation technique. The ground states associated with the…

统计力学 · 物理学 2015-05-28 Robert D. Batten , Frank H. Stillinger , Salvatore Torquato

We propose herein a method of material-structure integrated design for broadband absorption of dielectric metamaterial, which is achieved by combination of genetic algorithm and simulation platform. A multi-layered metamaterial absorber…

应用物理 · 物理学 2022-01-26 Mengyue Peng , Faxiang Qina , Liping Zhou , Huijie Wei , Zihao Zhu , Xiaopeng Shen

We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of…

材料科学 · 物理学 2019-01-30 Atanu Patra , Monodeep Chakraborty , Anushree Roy

We propose the general multi-band quasiclassical Eilenberger theory of superconductivity to describe quasiparticle excitations in inhomogeneous systems. With the use of low-energy projection matrix, the $M$-band quasiclassical Eilenberger…

超导电性 · 物理学 2016-07-08 Yuki Nagai , Hiroki Nakamura

Kesterite I$_2$-II-IV-V$_4$ semiconductors are promising solar absorbers for photovoltaics applications. The band gap and it's character, either direct or indirect, are fundamental properties determining photovoltaic-device efficiency. We…

材料科学 · 物理学 2018-08-29 L. Weston , C. Stampfl

Semiconductor superlattices are interesting for two distinct reasons: the possibility to design their structure (band-width(s),doping, etc.) gives access to a large parameter space where different physical phenomena can be explored.…

凝聚态物理 · 物理学 2022-09-21 A. P. Jauho , A. Wacker , A. A. Ignatov
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