相关论文: Dirac-Source Diode with Sub-unity Ideality Factor

The negative differential thermal conductance (NDTC) provides the key mechanism for realizing thermal transistors. This exotic effect has been the object of an extensive theoretical investigation, but the implementation is still limited to…

As a novel quantum phenomenon with nonreciprocal supercurrent, the Josephson diode effect was intensively studied in recent years. Here, we construct a generalized resistively capacitance shunted junction (RCSJ) model as a low-energy…

We report the experimental realization of two-dimensional (2D) weak topological insulator (WTI) in spinless Su-Schrieffer-Heeger circuits with parity-time and chiral symmetries. Strong and weak $\mathbb{Z}_2$ topological indexes are adopted…

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized…

This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…

Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting…

Controlling heat flow by phononic nanodevices has received significant attention recently because of its fundamental and practical implications. Elementary phononic devices such as thermal rectifiers, transistors, and logic gates are…

We study gated field effect transistors (FETs) with fractal geometries under Dyakonov and Shur asymmetric boundary conditions, where the source and drain span the left and right edges of the device respectively. An AC THz potential…

In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…

This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is…

We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states (DOS) in the superconductor. In the limit of a…

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film…

Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier…

In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and…

We discuss dynamic spin susceptibility (DSS) in two-dimensional (2D) Dirac electrons with spin-orbit interactions to characterize topological insulators. The imaginary part of the DSS appears as an absorption rate in response to a…

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…

We numerically demonstrate a new type of waveform-selective metasurface that senses the difference in incoming waveforms or pulse widths at the same frequency. Importantly, the proposed structure contains precise rectifier circuits that,…

Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…

Semiconducting diode with nonreciprocal transport effect underlies the cornerstone of contemporary integrated circuits (ICs) technology. Due to isotropic superconducting properties and the lack of breaking of inversion symmetry for…