相关论文: Dirac-Source Diode with Sub-unity Ideality Factor
Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The…
We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…
For graphene (a Dirac material) it has been theoretically predicted and experimentally observed that DC resistivity is proportional to $ T^4$ when the temperature is much less than Bloch- Gr\"{u}neisen ($\Theta_{BG}$) temperature and T…
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 \times 10^{14}$~cm$^{-2}$ 24GeV/c proton fluence. The as fabricated Ti-GaAs barrier…
The superconducting diode effect (SDE) is defined by the difference in the magnitude of critical currents applied in opposite directions. It has been observed in various superconducting systems and attracted high research interests.…
Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical…
Considering screeening of electron scattering interactions in terms of the finite-temperature STLS theory and solving the linearized Boltzmann equation (with no appeal to a relaxation time approximation), we present a theoretical analysis…
Two-dimensional ($2$D) semi-Dirac systems, such as $2$D black phosphorus and arsenene, can exhibit a rich topological phase transition between insulating, semi-Dirac, and band inversion phases when subjected to an external modulation. How…
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all…
Although a superconductor has no DC losses, a superconducting system does have significant losses, especially when it comes to power supply. Here, we study two different power supply systems. The first, a conventional one, consists of a…
For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The…
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…
This paper projects the enhanced drive current of a n-type electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET…
The real-time power monitoring of gyrotron is one of the key issues in the operation of electron cyclotron resonance heating system. The detector can be used for real-time power monitoring. We analyzed the principle of diode detection and…
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the…
We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope…
The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This…
$\beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a…
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…