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The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…

介观与纳米尺度物理 · 物理学 2015-04-27 R. Ribeiro-Palau , F. Lafont , J. Brun-Picard , D. Kazazis , A. Michon , F. Cheynis , O. Couturaud , C. Consejo , B. Jouault , W. Poirier , F. Schopfer

The Syst\`eme Internationale d'unit\'es (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially…

介观与纳米尺度物理 · 物理学 2012-01-09 T. J. B. M. Janssen , N. E. Fletcher , R. Goebel , J. M. Williams , A. Tzalenchuk , R. Yakimova , S. Kubatkin , S. Lara-Avila , V. I. Falko

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics.…

介观与纳米尺度物理 · 物理学 2007-05-23 K. S. Novoselov , Z. Jiang , Y. Zhang , S. V. Morozov , H. L. Stormer , U. Zeitler , J. C. Maan , G. S. Boebinger , P. Kim , A. K. Geim

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…

介观与纳米尺度物理 · 物理学 2014-12-09 S. Novikov , N. Lebedeva , K. Pierz , A. Satrapinski

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at…

介观与纳米尺度物理 · 物理学 2016-05-25 S. Novikov , N. Lebedeva , J. Hamalainen , I. Iisakka , P. Immonen , A. J. Manninen , A. Satrapinski

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the…

We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling…

介观与纳米尺度物理 · 物理学 2020-03-11 Jaesung Park , Wan-Seop Kim , Dong-Hun Chae

Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator…

介观与纳米尺度物理 · 物理学 2015-06-16 A. Satrapinski , S. Novikov , N. Lebedeva

Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible…

We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and…

We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2}…

介观与纳米尺度物理 · 物理学 2015-05-30 Tian Shen , Wei Wu , Qingkai Yu , Curt A Richter , Randolph Elmquist , David Newell , Yong P. Chen

Quantum Hall effect (QHE) is the basis of modern resistance metrology. In Quantum Hall Array Resistance Standards (QHARS), several individual QHE elements, each one having the same QHE resistance (typically half of the von Klitzing…

仪器与探测器 · 物理学 2013-11-05 Massimo Ortolano , Marco Abrate , Luca Callegaro

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the…

We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_{H}$ is quantized into $R_{H}$ = $(h/e^2)\nu ^{-1}$…

介观与纳米尺度物理 · 物理学 2009-11-13 Satoru Masubuchi , Ken-ichi Suga , Masashi Ono , Koichi Kindo , Shojiro Takeyama , Tomoki Machida

Precision measurements of the quantum Hall resistance with alternating current (ac) in the kHz range were performed on epitaxial graphene in order to assess its suitability as a quantum standard of impedance. The quantum Hall plateaus…

介观与纳米尺度物理 · 物理学 2014-08-25 C. -C. Kalmbach , J. Schurr , F. J. Ahlers , A. Müller , S. Novikov , N. Lebedeva , A. Satrapinski

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative…

介观与纳米尺度物理 · 物理学 2012-05-01 T. J. B. M. Janssen , J. M. Williams , N. E. Fletcher , R. Goebel , A. Tzalenchuk , R. Yakimova , S. Lara-Avila , S. Kubatkin , V. I. Fal'ko

The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…

介观与纳米尺度物理 · 物理学 2024-05-14 Tonghang Han , Zhengguang Lu , Yuxuan Yao , Jixiang Yang , Junseok Seo , Chiho Yoon , Kenji Watanabe , Takashi Taniguchi , Liang Fu , Fan Zhang , Long Ju

Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene…

介观与纳米尺度物理 · 物理学 2013-08-26 J. Guignard , D. Leprat , D. C. Glattli , F. Schopfer , W. Poirier

It is theoretically possible to combine several Hall bars in arrays to define new quantum standards with perfectly quantized resistance values. We have thus, for the first time, developed and fabricated novel Quantum Hall Array Resistance…

介观与纳米尺度物理 · 物理学 2009-11-07 W. Poirier , A. Bounouh , K. Hayashi , H. Fhima , F. Piquemal , G. Geneves , J. P. Andre

We present an approach to the fractional quantum Hall effect observed in grapheme (GFQHE), basing us on the model developed previously for the fractional quantum Hall effect in a two-dimensional electron system embedded in a quantum well…

介观与纳米尺度物理 · 物理学 2015-07-20 M. A. Hidalgo
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