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The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of…

The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit coupling effect and nonreciprocal transport, which makes its…

应用物理 · 物理学 2025-01-10 Xiaoxiao Ma , Zhenghang Zhi , Weijie Deng , Tianxin Li , Qianchun Weng , Xufeng Kou , Wei Lu

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important…

Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a…

材料科学 · 物理学 2016-05-23 Qihang Liu , Xiuwen Zhang , L. B. Abdalla , Alex Zunger

This study presents a refined approach to computing the electronic structure of indium antimonide (InSb) using advanced \textit{ab initio} techniques with the In and Sb $4d^{10}$ semicore electrons included in the valence states. These…

材料科学 · 物理学 2025-08-04 Ritwik Das , Anne-Sophie Grimault-Jacquin , Frédéric Aniel

We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite…

介观与纳米尺度物理 · 物理学 2016-10-26 Malin Nilsson , Luna Namazi , Sebastian Lehmann , Martin Leijnse , Kimberly A. Dick , Claes Thelander

High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb…

介观与纳米尺度物理 · 物理学 2021-11-05 Isha Verma , Sedighe Salimian , Valentina Zannier , Stefan Heun , Francesca Rossi , Daniele Ercolani , Fabio Beltram , Lucia Sorba

The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell…

Following significant progress in the visualization and characterization of hybrid superconducting-semiconducting systems, greatly propelled by reports of Majorana zero modes in nanowire devices, considerable attention has been devoted to…

We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are…

Hybrid nanostructures consisting of two parallel InAs nanowires connected by an epitaxially grown superconductor (SC) shell recently became available. Due to the defect-free SC-semiconductor interface and the two quasi-one-dimensional…

Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel…

Semiconductor nanowires are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its…

Many promising building blocks of future electronic technology - including non-stoichiometric compounds, strongly correlated oxides, and strained or patterned films - are inhomogeneous on the nanometer length scale. Exploiting the…

介观与纳米尺度物理 · 物理学 2013-11-08 Anjan Soumyanarayanan , Michael M. Yee , Yang He , Hsin Lin , Dillon R. Gardner , Arun Bansil , Young S. Lee , Jennifer E. Hoffman

Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of semiconductor…

Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for…

介观与纳米尺度物理 · 物理学 2010-05-02 Desheng Kong , Jason C. Randel , Hailin Peng , Judy J. Cha , Stefan Meister , Keji Lai , Yulin Chen , Zhi-Xun Shen , Hari C. Manoharan , Yi Cui

The importance of microstructure increases when decreasing the size of an object to the nanoscale, along with the complexity of controlling it. For instance, it is particularly complicated to create nano-object with controlled interfaces.…

Nanowires with a GaSb core and an InAs shell (and the inverted structure) are interesting for studies of electron-hole hybridization and interaction effects due to the bulk broken band-gap alignment at the material interface. We have used…

介观与纳米尺度物理 · 物理学 2017-04-03 Florinda Viñas , H. Q. Xu , Martin Leijnse

Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological…

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid…

介观与纳米尺度物理 · 物理学 2016-04-25 S. Li , N. Kang , D. X. Fan , L. B. Wang , Y. Q. Huang , P. Caroff , H. Q. Xu
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