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相关论文: How electrons Coulomb repulsion changes Graphene b…

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We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene…

介观与纳米尺度物理 · 物理学 2011-06-14 N. M. R. Peres , J. M. B. Lopes dos Santos , A. H. Castro Neto

The theory of correlated electrons is currently moving beyond the paradigmatic Hubbard $U$, towards the investigation of intersite Coulomb interactions. Recent investigations have revealed that these interactions are relevant for the…

Superconducting mechanism mediated by interband exchange Coulomb repulsion is examined in an extended two-band Hubbard models with a wide band crossing the Fermi level and coexisting with a narrower band located at moderately lower energy.…

超导电性 · 物理学 2007-05-23 Masatoshi Imada

We investigate the electronic properties of corrugated graphene and show how rippling-induced pseudomagnetic fields alter graphene's low-energy electronic properties by combining first principles calculations with an effective field theory.…

介观与纳米尺度物理 · 物理学 2008-11-26 T. O. Wehling , A. V. Balatsky , A. M. Tsvelik , M. I. Katsnelson , A. I. Lichtenstein

We calculate theoretically the Coulomb drag resistivity for two graphene monolayers spatially separated by a distance "$d$". We show that the frictional drag induced by inter-layer electron-electron interaction goes asymptotically as…

介观与纳米尺度物理 · 物理学 2012-01-04 E. H. Hwang , S. Das Sarma

We study a two-band Hubbard model using the dynamical mean-field theory combined with the exact diagonalization method. At the electron density $n=2$, a transition from a band-insulator to a correlated semimetal occurs when the on-site…

强关联电子 · 物理学 2007-05-23 Y. Ono , K. Sano

We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…

强关联电子 · 物理学 2009-10-16 Michael Sentef , Jan Kunes , Philipp Werner , Arno P. Kampf

Renormalization of the Coulomb interaction in layered metals results in a strongly anisotropic plasma mode with low frequencies for small components of wave vector in the in-plane direction. Interaction of electrons with this mode was found…

超导电性 · 物理学 2007-05-23 S. N. Artemenko , S. V. Remizov

We analyze the effect of electron-electron interactions on Andreev current and shot noise in diffusive hybrid structures composed of a normal metal attached to a superconductor via a weakly transmitting interface. We demonstrate that at…

介观与纳米尺度物理 · 物理学 2009-11-11 A. V. Galaktionov , A. D. Zaikin

The boson-fermion model, describing a mixture of itinerant electrons hybridizing with tightly bound electron pairs represented as hard-core bosons, is here generalized with the inclusion of a term describing on-site Coulomb repulsion…

强关联电子 · 物理学 2009-11-07 Alfonso Romano

The influence of local electronic correlations on the properties of colossal magnetoresistance manganites is investigated. To this end, a ferromagnetic two-band Kondo lattice model is supplemented with the local Coulomb repulsion missing in…

强关联电子 · 物理学 2009-10-31 K. Held , D. Vollhardt

Electron distributions produced by grazing impact of fast protons on Mg(0001), Cu(111), Ag(111) and Au(111) surfaces are investigated, focusing on the effects of the electronic band structure. The process is described within the…

原子物理 · 物理学 2015-06-18 C. D. Archubi , M. Faraggi , V. M. Silkin , M. S. Gravielle

We study effects of a repulsive Coulomb interaction on the spectral gap in monolayer and bilayer graphene in the vicinity of the charge neutrality point by employing the functional renormalization-group technique. In both cases Coulomb…

强关联电子 · 物理学 2011-04-01 Andreas Sinner , Klaus Ziegler

Since the discovery of heavy-fermion superconductivity in CeCu$_{2}$Si$_{2}$, the material has attracted great interest particularly with regard to the nature of the superconducting pairing and its mechanism. Consequently, it is essential…

强关联电子 · 物理学 2026-01-01 Roxanne M. Tutchton , Jean-Pierre Julien , Qimiao Si , Jian-Xin Zhu

We study the effects of long and short-range electron-electron interactions in a graphene bilayer. Using a variational wavefunction technique we show that in the presence of long-range Coulomb interactions the clean bilayer is always…

强关联电子 · 物理学 2009-11-11 Johan Nilsson , A. H. Castro Neto , N. M. R. Peres , F. Guinea

We analyze the effects of the on-site Coulomb repulsion U on a band insulator using dynamical mean field theory (DMFT). We find the surprising result that the gap is suppressed to zero at a critical Uc1 and remains zero within a metallic…

强关联电子 · 物理学 2009-11-11 Arti Garg , H. R. Krishnamurthy , Mohit Randeria

We simulate the optical and electrical responses in gallium-doped graphene. Using density functional theory with a local density approximation, we simlutate the electronic band structure and show the effects of impurity doping (0-3.91\%) in…

Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…

介观与纳米尺度物理 · 物理学 2017-04-26 M. D. Petrović , F. M. Peeters

We demonstrate a close relation between Coulomb effects in non-local electron transport and non-local shot noise in three-terminal metallic conductors. Provided the whole structure is normal, cross-correlations in shot noise are negative…

介观与纳米尺度物理 · 物理学 2012-03-09 D. S. Golubev , A. D. Zaikin