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相关论文: Spin-flip-driven giant magneto-transport in A-type…

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Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…

Antiferromagnetic (AFM) spintronics, where magneto-transport is governed by an antiferromagnet instead of a ferromagnet, opens fascinating new perspectives for both fundamental research and device technology, owing to their intrinsic…

材料科学 · 物理学 2021-10-26 Haowen Wang , Wei Wang , Ni Hu , Tianci Duan , Songliu Yuan , Shuai Dong , Chengliang Lu , Jun-Ming Liu

We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on…

介观与纳米尺度物理 · 物理学 2014-12-03 Cheng Wang , Heidi Seinige , Gang Cao , Jian-Shi Zhou , John B. Goodenough , Maxim Tsoi

Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules…

介观与纳米尺度物理 · 物理学 2015-12-23 Fabian Otte , Stefan Heinze , Yuriy Mokrousov

Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one…

We report the magnetotransport properties of ferromagnet (FM)/antiferromagnet (AFM) Fe$_2$CrSi/Ru$_2$MnGe epitaxial bilayers using current-in-plane configurations. Above the critical thickness of the Ru$_2$MnGe layer to induce exchange…

材料科学 · 物理学 2017-04-13 T. Hajiri , M. Matsushita , Y. Z. Ni , H. Asano

We have studied anisotropic magnetoresistance (MR) and magnetization with rotating magnetic field (B) within $CuO_2$ plane in lightly doped AF $Nd_{2-x}Ce_xCuO_{4}$. \emph{A giant anisotropy} in MR is observed at low temperature below 5 K.…

超导电性 · 物理学 2009-11-13 T. Wu , C. H. Wang , G. Wu , D. F. Fang , J. L. Luo , G T. Liu , X. H. Chen

Understanding the magnetoresistance (MR) of a magnetic material forms the basis for uncovering the orbital mechanisms and charge-spin interactions in the system. Although the parent state of iron-based high-temperature superconductors,…

Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has…

材料科学 · 物理学 2019-06-11 Haowen Wang , Chengliang Lu , Jun Chen , Yong Liu , S. L. Yuan , Sang-Wook Cheong , Shuai Dong , Jun-Ming Liu

The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only…

The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets…

Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…

材料科学 · 物理学 2020-08-12 Dongzhe Li , Fabian Pauly , Alexander Smogunov

How to realize applicably appreciated functionalities based on the coupling between charge and spin degrees of freedom is still a challenge in the field of spintronics. For example, anisotropic magnetoresistance (AMR) effect is utilized to…

材料科学 · 物理学 2021-04-20 Z. L. Sun , A. F. Wang , H. M. Mu , H. H. Wang , Z. F. Wang , T. Wu , Z. Y. Wang , X. Y. Zhou , X. H. Chen

We introduce a minimal interface-scattering mechanism that produces a sizable anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (e.g., Pt/YIG) without invoking bulk spin or orbital Hall currents. In a $\delta$-layer model…

介观与纳米尺度物理 · 物理学 2025-10-17 Ivan Iorsh , Mikhail Titov

Angular-dependent in-plane magnetoresistance (AMR) for single crystal $Na_{0.34}(H_3O)_{0.15}CoO_2$ with charge ordering is studied systematically. The anisotropic magnetoresistance shows a twofold symmetry at high temperature with rotating…

强关联电子 · 物理学 2009-11-11 C. H. Wang , X. H. Chen , G. Wu , T. Wu , H. T. Zhang , J. L. Luo , G. T. Liu , N. L. Wang

Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state…

Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of…

Magnetic moments intercalated into layered transition metal dichalcogenides are an excellent system for investigating the rich physics associated with magnetic ordering in a strongly anisotropic, strong spin-orbit coupling environment. We…

强关联电子 · 物理学 2015-04-08 Will J. Hardy , Chih-Wei Chen , A. Marcinkova , Heng Ji , Jairo Sinova , D. Natelson , E. Morosan

Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…

材料科学 · 物理学 2016-02-17 Dorj Odkhuu , Noejung Park

We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to…

强关联电子 · 物理学 2014-09-01 A. T. Wong , C. Beekman , H. Guo , W. Siemons , Z. Gai , E. Arenholz , Y. Takamura , T. Z. Ward
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