相关论文: Spin-valley coupling anisotropy and noise in CMOS …

We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot,…

Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…

Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors,…

We measure the frequency spectra of random spin fluctuations, or "spin noise", in ensembles of (In,Ga)As/GaAs quantum dots (QDs) at low temperatures. We employ a spin noise spectrometer based on a sensitive optical Faraday rotation…

Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate…

The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the…

The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we…

Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…

Spins confined to atomically-thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lattice gives rise to an additional valley degree of freedom…

We develop a theory of spin noise in semiconductor nanowires considered as prospective elements for spintronics. In these structures spin-orbit coupling can be realized as a random function of coordinate correlated on the spatial scale of…

With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

Spin-noise measurements can serve as direct probe for the microscopic decoherence mechanism of an electronic spin in semiconductor quantum dots (QD).We have calculated the spin-noise spectrum in the anisotropic central spin model using a…

Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor,…

Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fabricated in a state-of-the-art 300 mm nanoelectronics…

Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to…

Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…

Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…

An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate…

Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…