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The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…

介观与纳米尺度物理 · 物理学 2020-11-18 Nicholas E. Penthorn , Joshua S. Schoenfield , Lisa F. Edge , HongWen Jiang

The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized…

介观与纳米尺度物理 · 物理学 2025-07-08 Benjamin D. Woods , Merritt P. Losert , Nasir R. Elston , M. A. Eriksson , S. N. Coppersmith , Robert Joynt , Mark Friesen

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state…

The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…

介观与纳米尺度物理 · 物理学 2022-01-25 Donovan Buterakos , Sankar Das Sarma

Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…

介观与纳米尺度物理 · 物理学 2008-04-12 L. S. Levitov , E. I. Rashba

High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave…

介观与纳米尺度物理 · 物理学 2017-01-06 J. Salfi , J. A. Mol , Dimitrie Culcer , S. Rogge

We study the low energy states of finite spin chains with isotropic (Heisenberg) and anisotropic (XY and Ising-like) exchange interaction with uniform and non-uniform coupling constants. We show that for an odd number of sites a spin…

介观与纳米尺度物理 · 物理学 2009-11-07 Florian Meier , Jeremy Levy , Daniel Loss

Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…

介观与纳米尺度物理 · 物理学 2026-04-16 Nicklas Meineke , Guido Burkard

Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar…

We investigate effects of spin-orbit splitting on electronic transport in a spin valve consisting of a large quantum dot defined on a two-dimensional electron gas with two ferromagnetic contacts. In the presence of both structure inversion…

介观与纳米尺度物理 · 物理学 2007-05-23 H. Saarikoski , W. Wetzels , G. E. W. Bauer

Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms…

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…

A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing…

In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with…

We theoretically consider the temporal dynamics of two coupled spin qubits (e.g., semiconductor quantum dots) driven by the inter-qubit spin-spin coupling. The presence of environmental noise (e.g., charge traps, nuclear spins, random…

介观与纳米尺度物理 · 物理学 2016-07-29 S. Das Sarma , Robert E. Throckmorton , Yang-Le Wu

The valley splitting (VS) of a silicon quantum dot plays an important role for the performance and scalability of silicon spin qubits. In this work we investigate the VS of a SiGe/Si/SiGe heterostructure as a function of the size and…

介观与纳米尺度物理 · 物理学 2024-05-07 Jonas R. F. Lima , Guido Burkard

Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using…

Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential.…

We discuss advantages and limitations of the spin noise spectroscopy for characterization of interacting quantum dot systems on specific examples of individual singly and doubly charged quantum dot molecules (QDMs). It is shown that all the…

介观与纳米尺度物理 · 物理学 2013-07-29 Dibyendu Roy , Yan Li , Alex Greilich , Yuriy V. Pershin , Avadh Saxena , Nikolai A. Sinitsyn

The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…

介观与纳米尺度物理 · 物理学 2020-04-24 Kuan Eng Johnson Goh , Fabio Bussolotti , Chit Siong Lau , Dharmraj Kotekar-Patil , Zi En Ooi , Jingyee Chee