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相关论文: Possibility of n-type doping in CaAl$_2$Si$_2$-typ…

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The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type doping of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as…

材料科学 · 物理学 2019-01-10 Prashun Gorai , Eric S. Toberer , Vladan Stevanovic

The bilayer Ruddlesden-Popper nickelate $\mathrm{La_3Ni_2O_7}$ has emerged as a promising platform for exploring and understanding high-temperature superconductivities. While most prior doping studies have focused on hole doping via…

超导电性 · 物理学 2026-05-29 Shi-Cong Mo , Wéi Wú

Doping problems in GaN and in AlGaN alloys are addressed on the basis of state-of-the-art first-principles calculations. For n-type doping we find that nitrogen vacancies are too high in energy to be incorporated during growth, but silicon…

凝聚态物理 · 物理学 2009-10-31 Chris G. van de Walle , Catherine Stampfl , Joerg Neugebauer

Dopability in semiconductors plays a crucial role in device performance. Using the first-principles density-functional theory calculations, we investigate systematically the doping properties of layered MX2 (M= Mo, W; X=S, Te) by replacing…

材料科学 · 物理学 2018-04-27 Dan Guo , Kaike Yang , Tao Shen , Jin Xiao , Li-Ming Tang , Zhongming Wei , Guanghui Zhou , Hui-Xiong Deng

The percentage of substitutional doping of magnetic atoms (Mn) in group-IV-based dilute magnetic semiconductors (DMS) can be increased by co-doping with another conventional electronic dopant (e-dopant) [Zhu et al., Phys. Rev. Lett. 100,…

材料科学 · 物理学 2009-06-04 Hua Chen , Wenguang Zhu , Efthimios Kaxiras , Zhenyu Zhang

Zinc Phosphide ($Zn_3P_2$) could be the basis for cheap and highly efficient solar cells. Its use in this regard is limited by the difficulty in n-type doping the material. In an effort to understand the mechanism behind this, the…

材料科学 · 物理学 2012-03-06 Steven Demers , Axel van de Walle

Doped heavy metal-free III-V semiconductor nanocrystal quantum dots are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the…

介观与纳米尺度物理 · 物理学 2023-06-27 Lior Asor , Jing Liu , Shuting Xiang , Nir Tessler , Anatoly I. Frenkel , Uri Banin

Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant…

材料科学 · 物理学 2024-11-12 Shuxiang Zhou , Zilong Hua , Kaustubh K. Bawane , Hao Zhou , Tianli Feng

We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and…

The recent discovery of n-type Mg$_3$Sb$_2$ thermoelectric has ignited intensive research activities on searching for potential n-type dopants for this material. Using first-principles defect calculations, here we conduct a systematic…

材料科学 · 物理学 2020-09-23 Jiawei Zhang , Lirong Song , Bo Brummerstedt Iversen

We report on detailed structural, electronic and magnetic studies of GdMn$_{1-x}$Cr$_x$O$_3$ for Cr doping levels 0 $\le$ $x$ $\le$ 1. In the solid solutions, the Jahn-Teller distortion associated with Mn$^{3+}$ ions gives rise to major…

Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film…

超导电性 · 物理学 2012-05-01 Takayoshi Katase , Soshi Iimura , Hidenori Hiramatsu , Toshio Kamiya , Hideo Hosono

Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopical…

材料科学 · 物理学 2016-10-06 E. Menéndez-Proupin , P. Palacios , P. Wahnón

We study the feasibility of boron doping in gallium oxide ($\text{Ga}_2\text{O}_3$) for neutron detection. $\text{Ga}_2\text{O}_3$ is a wide band-gap, radiation hard material which has potential for neutron detection if it can be doped with…

材料科学 · 物理学 2020-07-07 Jouko Lehtomäki , Jingrui Li , Patrick Rinke

We report a detailed first-principles study of doping in Li$_2$MnO$_3$, in both the dilute doping limit and heavy doping, using hybrid density-functional calculations. We find that Al, Fe, Mo, and Ru impurities are energetically most…

材料科学 · 物理学 2017-12-07 Khang Hoang

We report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) compounds and in particular we analyze the formation energy of the different point defects with the aim to understand the intrinsic doping mechanisms. We find that…

First-principles calculations based on density functional theory have been carried out to understand the mechanism of fabricating As-doped p-type ZnO semiconductors. It has been confirmed that AsZn-2VZn complex is the most plausible…

材料科学 · 物理学 2013-05-20 Chol-Jun Yu , Yong-Guk Choe , Son-Guk Ri , Myong-Il Kim , Song-Jin Im

Doping lithium-ion battery electrode materials LiMO$_2$ (M = Co, Ni, Mn) with impurities has been shown to be an effective way to optimize their electrochemical properties. Here, we report a detailed first-principles study of layered oxides…

材料科学 · 物理学 2017-12-07 Khang Hoang

Very recently, a 3$d$ based honeycomb cobaltate Na$_2$Co$_2$TeO$_6$ has garnered tremendous attention due to the proposed proximity to the Kitaev spin-liquid state as its 4$d$/5$d$ counterparts. Here, we use Zn to substitute Co in a broad…

In this paper we investigate, computationally and experimentally, the phase stability, electronic structure properties, and the propensity for n-type doping of In$_{2}$X$_{2}$O$_{7}$ (X=Si, Ge) ternary oxides. This family of materials…

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