相关论文: Interface quality in GaSb/AlSb short period superl…
Development of fabrication protocols for large-area plasmonic nanostructures with sub-10 nm gaps with a spatially controlled distribution is critical for their real-world applications. In this work, we develop a simple, cleanroom-free…
A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…
Electron-phase modulation in magnetic and electric fields will be presented in In_(0.75)Ga_(0.25)As Aharonov-Bohm (AB) rings. The zero Schottky barrier of this material made it possible to nanofabricate devices with radii down to below 200…
Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory…
We present a technique capable of producing subwavelength focal spots in the far-field of the source in planar non-resonant structures. The approach combines the diffraction gratings that generate the high-wavevector-number modes and planar…
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional…
Strong field-confinement, long-lifetime resonances, and slow-light effects suggest that meta surfaces are a promising tool for nonlinear optical applications. These nanostructured devices have been utilized for relatively high efficiency…
Strained layer superlattice (SLS) detectors are a new class of infrared detectors available in the scientific and commercial markets. The photosensitive bandpass is set by material and engineered properties with typical detectors covering…
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of…
Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces…
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range.…
We present a semi-analytical model of the resonance phenomena occurring in a hybrid system made of a 1D array of periodic subwavelength slits deposited on an insulator/graphene layer. We show that the spectral response of this hybrid system…
The electronic symmetry of the SrTiO3/LaAlO3 interface was investigated by optical second harmonic generation, using superlattices with varying periodicity to study the evolution of the electronic reconstruction while avoiding substrate…
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…
Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the…
Design and modification of the interfaces, always a critical issue for semiconductor devices, has become the primary tool to harness the full potential of halide perovskite (HaP)-based ones. In particular the outstanding improvements in HaP…
We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very…
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates…
Ultra-thin tri-color (tri-layer) titanate superlattices ([3u.c. LaTiO3/2u.c. SrTiO3/3u.c. YTiO3], u.c. = unit cells) were grown in a layer-by-layer way on single crystal TbScO3 (110) substrates by pulsed laser deposition. High sample…
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.