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相关论文: Valley protected one-dimensional states in small-a…

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A twisted honeycomb bilayer exhibits a moir\'e superstructure that is composed of a hexagonal arrangement of AB and BA stacked domains separated by domain boundaries. In the case of twisted bilayer graphene, the application of an electric…

介观与纳米尺度物理 · 物理学 2025-10-17 Harold J. W. Zandvliet , Pantelis Bampoulis , Cristiane Morais Smith , Lumen Eek

We theoretically study the electronic structure of small-angle twisted bilayer graphene with a large potential asymmetry between the top and bottom layers. We show that the emergent helical states known to appear on the triangular AB-BA…

介观与纳米尺度物理 · 物理学 2020-03-18 Bonnie Tsim , Nguyen N. T. Nam , Mikito Koshino

We explore a network of electronic quantum valley Hall (QVH) states in the moir\'e crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-P\'erot and Aharanov-Bohm oscillations which are robust in…

Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…

介观与纳米尺度物理 · 物理学 2016-03-15 Wlodzimierz Jaskolski , Marta Pelc , Leonor Chico , Andres Ayuela

Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of…

介观与纳米尺度物理 · 物理学 2024-10-28 V. V. Enaldiev , C. Moulsdale , A. K. Geim , V. I. Fal'ko

Twisted bilayer graphene gives rise to large moir\'{e} patterns that form a triangular network upon mechanical relaxation. If gating is included, each triangular region has gapped electronic Dirac points that behave as bulk topological…

数学物理 · 物理学 2023-05-26 Guillaume Bal , Paul Cazeaux , Daniel Massatt , Solomon Quinn

The development of valleytronics demands long-range electronic transport with preserved valley index, a degree of freedom similar to electron spin. A promising structure for this end is a topological one-dimensional (1D) channel formed in…

介观与纳米尺度物理 · 物理学 2019-01-25 E. Mania , A. R. Cadore , T. Taniguchi , K. Watanabe , L. C. Campos

We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked…

介观与纳米尺度物理 · 物理学 2020-10-30 Christophe De Beule , Peter G. Silvestrov , Ming-Hao Liu , Patrik Recher

We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…

介观与纳米尺度物理 · 物理学 2023-09-13 Chiranjit Mondal , Rasoul Ghadimi , Bohm-Jung Yang

The electronic properties of graphene superlattices have attracted intense interest that was further stimulated by the recent observation of novel many-body states at "magic" angles in twisted bilayer graphene (BLG). For very small…

An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene…

介观与纳米尺度物理 · 物理学 2022-08-17 Fabian R. Geisenhof , Felix Winterer , Anna M. Seiler , Jakob Lenz , Ivar Martin , R. Thomas Weitz

In minimally twisted bilayer graphene, a moir{\'e} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge…

Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley,…

The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy…

介观与纳米尺度物理 · 物理学 2016-11-03 J. Li , K. Wang , K. J. McFaul , Z. Zern , Y. F. Ren , K. Watanabe , T. Taniguchi , Z. H. Qiao , J. Zhu

In this report we give a brief introduction on the occurrence of topologically protected one-dimensional electronic states in group IV two-dimensional graphene-like materials. We discuss the effect of spin-orbit coupling on the electronic…

介观与纳米尺度物理 · 物理学 2023-11-28 H. J. W. Zandvliet , J. D. Verbakel , Q. Yao , K. Sotthewes , P. Bampoulis

We report on a theoretical study of one-dimensional (1D) states localized at few-layer graphene system ribbon edges, and at interfaces between few-layer graphene systems with different valley Hall conductivities. These 1D states are…

介观与纳米尺度物理 · 物理学 2011-08-11 Jeil Jung , Fan Zhang , Zhenhua Qiao , Allan H. MacDonald

Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of…

介观与纳米尺度物理 · 物理学 2016-01-20 Mengqiao Sui , Guorui Chen , Liguo Ma , Wenyu Shan , Dai Tian , Kenji Watanabe , Takashi Taniguchi , Xiaofeng Jin , Wang Yao , Di Xiao , Yuanbo Zhang

A twisted graphene bilayer exhibits a triangular Moir\'e pattern in the local stacking, that smoothly alternates between the three basic types AA', AB' and BA'. Under an interlayer bias U, the latter two types develop a spectral gap,…

介观与纳米尺度物理 · 物理学 2013-09-26 Pablo San-Jose , Elsa Prada

Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…

介观与纳米尺度物理 · 物理学 2016-08-10 Feng-Wu Chen , Mei-Yin Chou , Yiing-Rei Chen , Yu-Shu Wu

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear…

材料科学 · 物理学 2015-09-30 M. Pelc , W. Jaskólski , A. Ayuela , L. Chico
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