相关论文: Temperature-induced phase transitions in the quant…
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…
We study the Josephson-like interlayer tunneling signature of the strongly correlated $\nu_T = 1$ quantum Hall phase in bilayer two-dimensional electron systems as a function of the layer separation, temperature and interlayer charge…
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible fractional quantum Hall state to a compressible state by tuning the bandgap at a given electron density.…
Double layer quantum Hall systems have interesting properties associated with interlayer correlations. At $\nu =1/m$ where $m$ is an odd integer they exhibit spontaneous symmetry breaking equivalent to that of spin $1/2$ easy-plane…
We present a general introduction to the non-zero temperature dynamic and transport properties of low-dimensional systems near a quantum phase transition. Basic results are reviewed in the context of experiments on the spin-ladder…
The integer quantum Hall states at fillings $\nu = 0$ and $|\nu| = 1$ in monolayer graphene have drawn much attention as they are generated by electron-electron interactions. Here we explore aspects of the $\nu = 0$ and $|\nu| = 1$ quantum…
The $\nu = 0$ quantum Hall state of bilayer graphene is a fertile playground to realize many-body ground states with various broken symmetries. Here we report the experimental observations of a previously unreported metallic phase. The…
Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the…
Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…
Bilayer graphene has been predicted to give unprecedented tunability of the electron-electron interaction with the help of external parameters, allowing one to stabilize different fractional quantum Hall states. Recent experimental works…
Several recent works have proposed that electron-electron interactions in bilayer graphene can be tuned with the help of external parameters, making it possible to stabilize different fractional quantum Hall states. In these prior works,…
We report on a theoretical study of $\nu=2$ bilayer quantum Hall systems with a magnetic field that has a component parallel to the layers. As in the $\nu=1$ case, interlayer phase coherence is closely coupled to electron correlations and…
In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the…
We consider the zero-filled quantum-Hall ferromagnetic state of bilayer graphene subject to a kink-like perpendicular electric field, which generates domain walls in the electronic state and low-energy collective modes confined to move…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…
We measured the magnetoresistance of bilayer quantum Hall (QH) effects at the fractional filling factor $\nu =2/3$ by changing the total electron density and the density difference between two layers. Three different QH states were…
An effective field theoretic description of $\nu=1$ bilayer electron systems stabilized by Coulomb repulsion in a single wide quantum well is examined using renormalization group techniques. The system is found to undergo a crossover from a…