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In this work, charge collection profiles of non-irradiated and irradiated 150 $\mu$m $p$-type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

仪器与探测器 · 物理学 2018-08-01 I. Mandić , V. Cindro , A. Gorišek , B. Hiti , G. Kramberger , M. Zavrtanik , M. Mikuž , T. Hemperek

This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were…

仪器与探测器 · 物理学 2021-02-03 M. Pezzarossa , E. Cepparrone , D. Cosic , M. Jakšić , G. Provatas , M. Vićentijević , E. Vittone

The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side.…

仪器与探测器 · 物理学 2016-08-31 E. Vittone , N. Skukan , Z. Pastuovic , P. Olivero , M. Jaksic

In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency…

A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip…

仪器与探测器 · 物理学 2009-11-10 T. Lari , A. Oh , N. Wermes , H. Kagan , M. Keil , W. Trischuk

We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…

The ion beam-induced charge (IBIC) analysis of a commercial silicon photodiode configured as a Position Sensitive Detector (PSD) for energetic charged particles is the subject of this report. Although the photodiode is designed for…

仪器与探测器 · 物理学 2024-12-17 Ettore Vittone , Georgios Provatas , Karla Ivanković Nizić , Milko Jaksic

This Letter uncovers five distinct charge transport modes and their transitions in dual-energy electron beam diodes. We via first-principle particle-in-cell (PIC) simulations establish that the specific mode (e.g., space charge…

等离子体物理 · 物理学 2026-05-21 Chubin Lin , Jiandong Chen , Huihui Wang , Yangyang Fu

We present a broadly applicable in situ method for profiling ion beams using electrostatic deflectors and a Faraday cup. By deconvolving the detector geometry from the resulting current profiles, spatially resolved absolute current density…

Existing Charge-Coupled Devices (CCDs) operate by detecting either the electrons or holes created in an ionization event. We propose a new type of imager, the Dual-Sided CCD, which collects and measures both charge carriers on opposite…

A new type of laser photodetachment (LPD) technique has been developed for the measurement of electron sheath thickness around an electrostatic probe and for the measurement of the length of collection region of photodetached electrons…

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…

3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…

The properties of surfaces with charge-regulated patches are studied using non-linear Poisson-Boltzmann theory. Using a mode expansion to solve the non-linear problem efficiently, we reveal the charging behaviour of Debye-length sized…

软凝聚态物质 · 物理学 2015-05-20 Niels Boon , René van Roij

Longitudinal charge profile measurements or bunch shape measurements is a challenge for temporally short non-relativistic bunches. The field profile has a larger longitudinal extent compared to the charge profile for such beams. This…

仪器与探测器 · 物理学 2022-04-06 R. Singh , T. Reichert

We present an innovative charge detector with high resolution and wide dynamic range designed to fulfill the requirements of a monitoring system for a high energy ion beam. The detector prototype, constructed using Si photodiodes and a…

Test beam measurements at the test beam facilities of DESY have been conducted to characterise the performance of the EUDET-type beam telescopes originally developed within the EUDET project. The beam telescopes are equipped with six sensor…

In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross…

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