相关论文: Theory of drain noise in high electron mobility tr…

We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…

Indium phosphide (InP) high electron-mobility transistors (HEMTs) are widely used in many fields such as quantum computing because of their unparalleled microwave noise performance. Achieving improved noise performance requires a physical…

The ab-initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a non-equilibrium steady state, which are…

The statistics of electron transport in a quantum conductor is affected by fluctuations of its voltage bias. Here we show experimentally how a third order correlation in the electromagnetic field arises from the noise of a tunnel junction…

We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…

Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…

We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…

The study of charge current fluctuations (noise) can give useful insights into the properties of nanoscale systems. In this work, the peculiar properties of noise in multiterminal hybrid normal-superconducting systems are explored in the…

The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of…

We use particle dynamics simulations to probe the correlations between noise and dynamics in a variety of disordered systems, including superconducting vortices, 2D electron liquid crystals, colloids, domain walls, and granular media. The…

We study the coupled current and magnetization noise in magnetic nanostructures by magnetoelectronic circuit theory. Spin current fluctuations, which depend on the magnetic configuration, are found to be an important source of magnetization…

Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…

Though electrical noise and conduction current are assigned to corpuscle-like electrons drifting in solid matter, this model hardly fits in the Fluctuation-Dissipation framework. However, fluctuations of energy due to displacements of…

An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external…

An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model,…

The possibility of a new type of computing, where thermal noise is the information carrier and the clock in a computer, is studied. The information channel capacity and the lower limit of energy requirement/dissipation are studied in a…

This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise…

Effects of ballistic transport on the temperature profiles and thermal resistance in nanowires are studied. Computer simulations of nanowires between a heat source and a heat sink have shown that in the middle of such wires the temperature…

A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias…