A Matterwave Transistor Oscillator
Abstract
An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a negative transresistance regime of the transistor. The thresholds of oscillation are shown to be primarily dependent on the potential energy height difference between Gate-Drain and Gate-Source barriers. The transistor potential is established with a combination of magnetic and optical fields using a compound glass and silicon substrate atom chip. The onset of oscillation and the output matterwave are observed through in-trap imaging. Time-of-flight absorption imaging is used to determine the time dependence of the Source well thermal and chemical energies as well as to estimate the value of the closed-loop ohmic Gate resistance, which is negative and is observed to cause cooling of Source atoms.
Cite
@article{arxiv.1208.3109,
title = {A Matterwave Transistor Oscillator},
author = {Seth C. Caliga and Cameron J. E. Straatsma and Alex A. Zozulya and Dana Z. Anderson},
journal= {arXiv preprint arXiv:1208.3109},
year = {2013}
}
Comments
Major revision incorporates new experimental data and a thermodynamic model. 5 pages, 6 figures, 19 references