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The electrical conductivity of the switching channel of vanadium dioxide thin-film sandwich structures is studied over a wide temperature range (15-300 K). It is shown that the electrical resistance of the channel varies with temperature as…

材料科学 · 物理学 2020-01-10 Alexander Pergament , Petr Boriskov , Nikolai Kuldin , Andrei Velichko

The bulk of topological insulators is relatively unexplored due to excess contribution of conduction from native defects. Here we investigate the bulk conduction in a Bi2Te3 crystal having reduced defect induced conduction. Our results…

材料科学 · 物理学 2019-05-22 Archana Lakhani , Devendra Kumar

The spectrum of massless Dirac electrons on the side surface of a three-dimensional weak topological insulator is significantly affected by whether the number of unit atomic layers constituting the sample is even or odd; it has a…

介观与纳米尺度物理 · 物理学 2015-06-23 Yositake Takane

Fluctuating Cooper pairs formed by spatially separated electrons and holes are precursors of their equilibrium condensation. Their presence strongly impacts transport phenomena and interlayer tunneling in double-layer systems above the…

超导电性 · 物理学 2022-01-04 Dmitry K. Efimkin

We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ~3 degrees the low energy carriers exhibit Landau level…

介观与纳米尺度物理 · 物理学 2011-04-18 A. Luican , Guohong Li , A. Reina , J. Kong , R. R. Nair , K. S. Novoselov , A. K. Geim , E. Y. Andrei

These compounds have long been known as promising thermoelectric materials. Recently it was revealed, that they also have unconventional electronic topology. This renewed interest to the investigation of their transport properties. In order…

介观与纳米尺度物理 · 物理学 2018-11-14 D. A. Pshenay-Severin , Y. V. Ivanov , A. T. Burkov

The low-energy Hamiltonian used to describe the dynamics of the helical Dirac fermions on the surface of a topological insulator contains a subdominant non-relativistic (Schr\"odinger) contribution. This term can have an important effect on…

介观与纳米尺度物理 · 物理学 2015-09-28 Calvin J. Tabert , J. P. Carbotte

From the solution of a two-band model, we predict that the thermal and electrical transport across the junction of a semimetal and an excitonic insulator will exhibit high resistance behavior and low entropy production at low temperatures,…

强关联电子 · 物理学 2007-05-23 Massimo Rontani , L. J. Sham

Fe3GeTe2 is a 2-dimensional van der Waals material exhibiting itinerant ferromagnetism upto 230 K. Here, we study aspects of scattering mechanism in Fe3Ge2Te2 single crystals via resistivity, magneto-transport and Hall effect measurements.…

强关联电子 · 物理学 2022-09-09 P. Saha , M. Singh , V. Nagpal , P. Das , S. Patnaik

The ability to transport energy is a fundamental property of the two-dimensional Dirac fermions in graphene. Electronic thermal transport in this system is relatively unexplored and is expected to show unique fundamental properties and to…

介观与纳米尺度物理 · 物理学 2013-08-13 K. C. Fong , Emma Wollman , Harish Ravi , Wei Chen , Aash Clerk , M. D. Shaw , H. G. LeDuc , K. C. Schwab

High entropy carbides ceramics with randomly-distributed multiple principal cations have shown high temperature stability, low thermal conductivity, and possible radiation tolerance. While chemical disorder has been shown to suppress…

材料科学 · 物理学 2022-05-23 Cody A. Dennett , Zilong Hua , Eric Lang , Fei Wang , Bai Cui

An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due…

介观与纳米尺度物理 · 物理学 2012-08-27 Richard S. Thompson , Yi-Chen Chang , Jia G. Lu

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged…

By using high-quality single crystals, we quantitatively compare the transport properties between LiFeAs and LiFeP superconductors with compensated electron and hole carriers. The low-temperature resistivity follows the Fermi-liquid $AT^2$…

超导电性 · 物理学 2012-02-27 S. Kasahara , K. Hashimoto , H. Ikeda , T. Terashima , Y. Matsuda , T. Shibauchi

Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of…

介观与纳米尺度物理 · 物理学 2012-05-28 Dong-Keun Ki , Dongchan Jeong , Jae-Hyun Choi , Kee-Su Park , Hu-Jong Lee

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high…

介观与纳米尺度物理 · 物理学 2011-08-16 J. Heo , H. J. Chung , Sung-Hoon Lee , H. Yang , D. H. Seo , J. K. Shin , U-In Chung , S. Seo , E. H. Hwang , S. Das Sarma

The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly…

材料科学 · 物理学 2010-01-18 Viera Skakalova , Alan B. Kaiser , Jai Seung Yoo , Dirk Obergfell , Siegmar Roth

We consider the transport properties of topological insulators surface states in the presence of uncorrelated point-like disorder, both in the classical and quantum regimes. The transport properties of those two-dimensional surface states…

介观与纳米尺度物理 · 物理学 2012-05-24 Pierre Adroguer , David Carpentier , Jérôme Cayssol , Edmond Orignac

We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to…

We consider the impact of electron-electron interactions on the temperature dependence of the anomalous Hall effect in disordered conductors. The microscopic analysis is carried out within the diagrammatic approach of the linear response…

介观与纳米尺度物理 · 物理学 2020-04-20 Songci Li , Alex Levchenko