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A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the…

介观与纳米尺度物理 · 物理学 2021-01-01 Weijie Li , Jingwei Mu , Shaoyun Huang , Dong Pan , Jianhua Zhao , H. Q. Xu

Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…

介观与纳米尺度物理 · 物理学 2015-05-27 A. Rossi , T. Ferrus , W. Lin , T. Kodera , D. A. Williams , S. Oda

A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…

介观与纳米尺度物理 · 物理学 2023-10-27 Weijie Li , Zhihai Liu , Jingwei Mu , Yi Luo , Dong Pan , Jianhua Zhao , H. Q. Xu

We have measured the differential conductance of a parallel carbon nanotube (CNT) double quantum dot (DQD) with strong inter-dot capacitance and inter-dot tunnel coupling. Nominally, the device consists of a single CNT with two contacts.…

介观与纳米尺度物理 · 物理学 2017-11-10 Gulibusitan Abulizi , Andreas Baumgartner , Christian Schönenberger

We investigate nonequilibrium transport in a triple-quantum-dot (TQD) system, where the central dot acts as a discrete tunnel barrier, subject to continuous monitoring by a quantum point contact (QPC) that is capacitively coupled to all…

介观与纳米尺度物理 · 物理学 2026-05-20 Alok Nath Singh , Rafael Sánchez , Andrew N. Jordan

A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by…

介观与纳米尺度物理 · 物理学 2016-08-24 Nikola Pascher , Szymon Hennel , Susanne Mueller , Andreas Fuhrer

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…

Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…

介观与纳米尺度物理 · 物理学 2007-05-23 A. K. Huettel , S. Ludwig , K. Eberl , J. P. Kotthaus

We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD.…

介观与纳米尺度物理 · 物理学 2015-05-19 A. Rossi , T. Ferrus , G. J. Podd , D. A. Williams

We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near…

介观与纳米尺度物理 · 物理学 2012-08-29 B. Küng , C. Rössler , M. Beck , J. Faist , T. Ihn , K. Ensslin

We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the…

介观与纳米尺度物理 · 物理学 2015-01-16 JunYan Luo , HuJun Jiao , Jing Hu , Xiao-Ling He , XiaoLi Lang , Shi-Kuan Wang

We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…

We investigated the peculiarities of non-equilibrium charge states and spin configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. We analyzed the…

介观与纳米尺度物理 · 物理学 2012-12-19 P. I. Arseyev , N. S. Maslova , V. N. Mantsevich

Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…

As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…

介观与纳米尺度物理 · 物理学 2011-10-17 T. Ferrus , A. Rossi , M. Tanner , G. Podd , P. Chapman , D. A. Williams

We present QDarts, an efficient simulator for realistic charge stability diagrams of quantum dot array (QDA) devices in equilibrium states. It allows for pinpointing the location of concrete charge states and their transitions in a…

介观与纳米尺度物理 · 物理学 2025-01-15 Jan A. Krzywda , Weikun Liu , Evert van Nieuwenburg , Oswin Krause

We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…

We study coherent oscillations in double quantum dots tunnel-coupled to metallic leads by means of full counting statistics of electron transport. If two such systems are coupled by Coulomb interaction, there are in total six (instead of…

介观与纳米尺度物理 · 物理学 2021-10-19 Eric Kleinherbers , Philipp Stegmann , Jürgen König

We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…

介观与纳米尺度物理 · 物理学 2009-05-29 S. Gustavsson , R. Leturcq , M. Studer , I. Shorubalko , T. Ihn , K. Ensslin , D. C. Driscoll , A. C. Gossard

We study the charge transport properties of triangular quantum dot molecule (TQDM) connected to metallic electrodes, taking into account all correlation functions and relevant charging states. The quantum interference (QI) effect of TQDM…

介观与纳米尺度物理 · 物理学 2015-02-24 Chih-Chieh Chen , Yia-chung Chang , David M T Kuo
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